Free Carriers in Ionic Semiconductors with a Degenerate Valence Band Edge

Abstract

b) -136, K129 (1986) Subject classification: 71.38 V. I. Lenin State University, Kishinev F r e e C a r r i e r s in Ionic Semiconductors with a Degenerate Valence Band Edge

A Weakly‐Bonded Polaron in Semiconductors with a Degenerate Valence Band Edge

“…In order to compare the results of this paper with the results which have been obtained in the bound polaron theory in semiconductors with degenerate band by means of the path integral method [3], we also give numerical calculations for Gap; it should be borne in mind, however, that for G a P the criteria of the applicability of the theory developed in this paper are fulfilled with difficulty.…”

“…= 43.99 meV. The path-integral method gives the value of E::; = 34.26 meV for the weakly bound polaron in gallium phosphide [3]. Thus, in this case the proposed approach also yields a "lower" Experimental values of the shallow acceptor ionization energy in gallium phosphide are listed in [17].…”

“…Therefore, in [l] only two virtual levels were used, naturally giving underestimated final results. b) In [3], where the path integral method was used to consider the polaronic effect, the non-diagonal part of the matrix Hamiltonian was separated and then considered as a perturbation. Nevertheless such an approach turns out to be applicable only under the condition xo = p,,/p, & 3.…”

“…In the first papers on the theory of impurity-phonon systems in semiconductors with degenerate band the perturbation theory [l, 21 was used for the case of weak polaron coupling (a 4 1) and the path-integral method [3] for the intermediate polaron coupling.…”