Free carriers's effective mass and relaxation-time analysis by high-pulsed-field Faraday oscillations in III-V compounds

Julienne, D.; Saos, F. Le; Fortini, A.; Bauduin, P.

doi:10.1103/physrevb.13.2576

“…A comparison with other experimental values measured at different dimensions and for various densities is presented in Fig. 4a, where the data for D > 1 are taken from [8,14,[26][27][28][29][30][31][32][33][34][35]. A systematic interpretation of this emergent picture can be given in terms of Fermi-liquid theory [9], which is valid for D > 1.…”

Section: Having Shown Our Technique To Work Successfully In 2dmentioning

confidence: 85%

“…Density dependence of the electron mass in GaAs at different dimensionalities. (a) Three-dimensional (bulk), m * 3D , and two-dimensional, m * 2D , effective mass of electrons in GaAs as a function of interaction parameter rs [data taken from [8,14,[26][27][28][29][30][31][32][33][34][35]. (b) Bare electron mass m0 as extracted using our tunnelling-spectroscopy technique, for a variety of different-length devices.…”

Section: Having Shown Our Technique To Work Successfully In 2dmentioning

confidence: 99%

Decoupling of the many-body effects from the electron mass in GaAs by means of reduced dimensionality

Vianez¹,

Jin²,

Tan³

et al. 2021

Preprint

0

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Determining the (bare) electron mass m0 in crystals is often hindered by many-body effects since Fermi-liquid physics renormalises the band mass, making the observed effective mass m * depend on density. Here, we use a one-dimensional (1D) geometry to amplify the effect of interactions, forcing the electrons to form a nonlinear Luttinger liquid with separate holon and spinon bands, therefore separating the interaction effects from m0. Measuring the spectral function of gated quantum wires formed in GaAs by means of magnetotunnelling spectroscopy and interpreting them using the 1D Fermi-Hubbard model, we obtain m0 = (0.0525 ± 0.0015)me in this material, where me is the free-electron mass. By varying the density in the wires, we change the interaction parameter rs in the range from ∼1-4 and show that m0 remains constant. The determined value of m0 is ∼ 22% lighter than observed in GaAs in geometries of higher dimensionality D (D > 1), consistent with the quasi-particle picture of a Fermi liquid that makes electrons heavier in the presence of interactions.

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“…A comparison with other experimental values measured at different dimensions and for various densities is presented in Fig. 6a, where the data for D > 1 are taken from [8,14,24,[34][35][36][37][38][39][40][41][42].…”

Section: Discussionmentioning

confidence: 99%

“…(a) Density dependence of the electron mass in GaAs at different dimensionalities. Three-dimensional (bulk), m ⋆ 3D , and two-dimensional, m ⋆ 2D , effective mass of electrons in GaAs as a function of interaction parameter rs [data taken from [8,14,24,[34][35][36][37][38][39][40][41][42]. ⋆ shows m ⋆ 2D extracted from our devices using tunnelling spectroscopy, and shown in Fig.…”

Section: Discussionmentioning

confidence: 99%

Decoupling of the many-body effects from the electron mass in GaAs by means of reduced dimensionality

Vianez¹,

Jin²,

Tan³

et al. 2023

Phys. Rev. B

1

0

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Determining the (bare) electron mass m0 in crystals is often hindered by many-body effects since Fermi-liquid physics renormalises the band mass, making the observed effective mass m * depend on density. Here, we use a one-dimensional (1D) geometry to amplify the effect of interactions, forcing the electrons to form a nonlinear Luttinger liquid with separate holon and spinon bands, therefore separating the interaction effects from m0. Measuring the spectral function of gated quantum wires formed in GaAs by means of magnetotunnelling spectroscopy and interpreting them using the 1D Fermi-Hubbard model, we obtain m0 = (0.0525 ± 0.0015)me in this material, where me is the free-electron mass. By varying the density in the wires, we change the interaction parameter rs in the range from ∼1-4 and show that m0 remains constant. The determined value of m0 is ∼ 22% lighter than observed in GaAs in geometries of higher dimensionality D (D > 1), consistent with the quasi-particle picture of a Fermi liquid that makes electrons heavier in the presence of interactions.

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An accurate expression for the generalized fermi‐dirac integral derived from a kane nonparabolic relation and its reversion. An applicationto n‐type degenerate gaas crystals

Cong¹

1996

Physica Status Solidi (b)

2

0

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By means of a piecewise cubic Hermitian polynomial approximation and a theorem for the asymptotics used in our previous papers, an accurate expression for the generalized Fermi-Dirac integral F ( z ) , derived from a Kane nonparabolic dispersion relation, for any values of reduced Fermi energy z and for the dimensionless conduction-band nonparabolicity parameter B in the interval [0,0.1493], is investigated with a precision of the order of 2 x lo-'. Then, two short series representations for F ( z ) are also presented and discussed. These accurate values of F ( z ) (or reduced carrier density u(z)) are used to evaluate the error of our two approximate expressions for z(u), appropriate to the lightly degenerate and degenerate cases, z 5 4 and z 2 4, respectively, and accurate within 0.5%.Finally, taking account of both the electron-electron interaction effect and the spin-orbit splitting interaction effect, the reduced Fermi energy z(u) and the electron effective mass in n-type heavily doped GaAs crystals at 4.2 and 300K are determined. Their numerical results are also compared with existing experimental results.

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Free carriers's effective mass and relaxation-time analysis by high-pulsed-field Faraday oscillations in III-V compounds

Cited by 7 publications

References 21 publications

Decoupling of the many-body effects from the electron mass in GaAs by means of reduced dimensionality

Decoupling of the many-body effects from the electron mass in GaAs by means of reduced dimensionality

Decoupling of the many-body effects from the electron mass in GaAs by means of reduced dimensionality

An accurate expression for the generalized fermi‐dirac integral derived from a kane nonparabolic relation and its reversion. An applicationto n‐type degenerate gaas crystals

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