Free Current Carrier Concentration and Point Defects in Bi2−xSbxSe3 Crystals

Plechäček, T.; Navrátil, J.; Horák, J.

doi:10.1006/jssc.2001.9486

Cited by 28 publications

(16 citation statements)

References 10 publications

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“…All the crystals exhibit metallic conduction, owing to the presence of Se vacancies that induce extra electrons in the conduction bands. 20,21 The data from all the CVT-grown crystals basically fall on the same line, suggesting that these crystals are almost identical. The residual resistance ratio (RRR), defined by the room-temperature resistance divided by the low-temperature one, is about 10.…”

Section: Resultsmentioning

confidence: 74%

Growth and characterization of Bi2Se3 crystals by chemical vapor transport

et al. 2012

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Regularly-shaped high-quality Bi2Se3 crystals were grown by a chemical vapor transport using iodine as the transport agent. In addition to exhibiting a characteristic Dirac cone for a topological insulator, the Bi2Se3 crystals show some outstanding properties including additional crystallographic surfaces, large residual resistance ratio (∼10), and high mobility (∼8000 cm2·V−1·s−1). The low-temperature resistivity abnormally increases with applying pressures up to 1.7 GPa, and no superconductivity was observed down to 0.4 K

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Section: Resultsmentioning

confidence: 74%

Growth and characterization of Bi2Se3 crystals by chemical vapor transport

et al. 2012

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“…This can also be supported by two facts: (1) the rather higher formation energy of vacancies in typical covalent materials such as Si, Ge, or GaAs. For example, in Si the formation energy for a vacancy has been calculated to be 3.3 eV; and (2) the increased formation energy of a vacancy along the Bi 2 Se 3 ‐Sb 2 Se 3 pseudo binary line . Hence, the pronounced antibonding states in MVB materials contribute to the high carrier concentration.…”

Section: Structures and Some Applications Of V2vi3 Compounds The Figmentioning

confidence: 99%

Understanding the Structure and Properties of Sesqui‐Chalcogenides (i.e., V₂VI₃ or Pn₂Ch₃ (Pn = Pnictogen, Ch = Chalcogen) Compounds) from a Bonding Perspective

et al. 2019

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and β-As 2 Te 3 ) and GaSe are investigated. Atom probe tomography studies reveal that four of the seven sesqui-chalcogenides (Bi 2 Te 3 , Bi 2 Se 3 , Sb 2 Te 3 , and β-As 2 Te 3 ) show an unconventional bond-breaking mechanism. The same four compounds evidence a remarkable property portfolio in density functional theory calculations including large Born effective charges, high optical dielectric constants, low Debye temperatures and an almost metal-like electrical conductivity. These results are indicative for unconventional bonding leading to physical properties distinctively different from those caused by covalent, metallic, or ionic bonding. The experiments reveal that this bonding mechanism prevails in four sesqui-chalcogenides, characterized by rather short interlayer distances at the van der Waals like gaps, suggestive of significant interlayer coupling. These conclusions are further supported by a subsequent quantum-chemistry-based bonding analysis employing charge partitioning, which reveals that the four sesqui-chalcogenides with unconventional properties are characterized by modest levels of charge transfer and sharing of about one electron between adjacent atoms. Finally, the 3D maps for different properties reveal discernible property trends and enable material design.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.201904316.Chalcogenides are attracting considerable attention due to their striking properties. These characteristics enable a wide range of applications ranging from phase-change materials (PCMs) [1][2][3] to thermoelectrics [4] and topological insulators [5,6] for the heavier chalcogenides. The remarkable application potential has been attributed to an unconventional property portfolio. [2,[7][8][9] Adv. Mater. 2019, 31, 1904316

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“…[ 32,73 ] Notably, S substitution on the Se-site quickly shifts the p-n crossover point down to x = 0.13. [ 68,74,75 ] Doping n-type Bi 2 Se 3 with Sb [ 76 ] or doping p-type Sb 2 Te 3 with Se [77][78][79] rapidly diminish the carrier concentration (Figure 3 c). Teramoto et al found that y 0 , the y value at which the p-n transition occurs, increases with the x value in the Sb x Bi 2x Te 3y Se y quaternary system (Figure 3 d).…”

Section: Compositional Control In Cation-rich V 2 Vi 3 Compoundsmentioning

confidence: 99%

“…[ 29,73,74 ] c) Room temperature carrier concentration of unidirectionally grown p-type Sb 2 Te 3x Se 3 and p-type Bi 2x Sb x Se 3 as a function of Se content and Sb content, respectively. [ 76,77 ] d) The y 0 value (the Sb content at which the p-n transition occurs) of unidirectionally grown Bi 2y Sb y Te 3x Se x as a function of Se content x . [ 80 ] and Sb 2 Te 3 ingots, respectively.…”

Section: Synthesis Environment Controlmentioning

confidence: 99%

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

et al. 2016

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Defects and defect engineering are at the core of many regimes of material research, including the field of thermoelectric study. The 60‐year history of V2VI3 thermoelectric materials is a prime example of how a class of semiconductor material, considered mature several times, can be rejuvenated by better understanding and manipulation of defects. This review aims to provide a systematic account of the underexplored intrinsic point defects in V2VI3 compounds, with regard to (i) their formation and control, and (ii) their interplay with other types of defects towards higher thermoelectric performance. We herein present a convincing case that intrinsic point defects can be actively controlled by extrinsic doping and also via compositional, mechanical, and thermal control at various stages of material synthesis. An up‐to‐date understanding of intrinsic point defects in V2VI3 compounds is summarized in a (χ, r)‐model and applied to elucidating the donor‐like effect. These new insights not only enable more innovative defect engineering in other thermoelectric materials but also, in a broad context, contribute to rational defect design in advanced functional materials at large.

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Free Current Carrier Concentration and Point Defects in Bi2−xSbxSe3 Crystals

Cited by 28 publications

References 10 publications

Growth and characterization of Bi2Se3 crystals by chemical vapor transport

Growth and characterization of Bi2Se3 crystals by chemical vapor transport

Understanding the Structure and Properties of Sesqui‐Chalcogenides (i.e., V₂VI₃ or Pn₂Ch₃ (Pn = Pnictogen, Ch = Chalcogen) Compounds) from a Bonding Perspective

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

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Free Current Carrier Concentration and Point Defects in Bi2−xSbxSe3 Crystals

Cited by 28 publications

References 10 publications

Growth and characterization of Bi2Se3 crystals by chemical vapor transport

Growth and characterization of Bi2Se3 crystals by chemical vapor transport

Understanding the Structure and Properties of Sesqui‐Chalcogenides (i.e., V2VI3 or Pn2Ch3 (Pn = Pnictogen, Ch = Chalcogen) Compounds) from a Bonding Perspective

New Insights into Intrinsic Point Defects in V2VI3 Thermoelectric Materials

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Understanding the Structure and Properties of Sesqui‐Chalcogenides (i.e., V₂VI₃ or Pn₂Ch₃ (Pn = Pnictogen, Ch = Chalcogen) Compounds) from a Bonding Perspective

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials