Free energy model for the analysis of bonding in a-SixNyHz alloys

Yin, Zhipeng; Smith, F. W.

doi:10.1116/1.577558

Cited by 23 publications

(3 citation statements)

References 1 publication

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“…Note that deviations due to numerical errors of the ray tracing simulations or the measurement uncertainty for the optical constants are not considered. The resulting value for λ b of 353 nm is equivalent to a photon energy of 3.5 eV, which is in good agreement with a bond energy of Si‐H between 3.34 and 3.5 eV according to References . Hence, we interpret that the UV irradiance induces the breaking of Si‐H bonds at the interface, which results in dangling bonds at the Si surface.…”

Section: Resultssupporting

confidence: 89%

UV-induced degradation of PERC solar modules with UV-transparent encapsulation materials

Witteck

Veith‐Wolf

Schulte‐Huxel

et al. 2017

Prog. Photovolt: Res. Appl.

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In this paper, we report on the stability of p-type passivated emitter and rear cells under ultraviolet (UV) exposure with various silicone nitride passivation coatings and embedded in different encapsulation polymers. Our results reveal that UV transparent polymers can result in a module power loss of up to 6% under a UV irradiation dose of 497 kWh/m 2 . We show that the degradation in power is caused by a reduction in open circuit voltage. This loss is related to an increased recombination in the cell, which we ascribe to a degradation of the surface passivation. With ray tracing simulations, we determine the number of photons reaching the passivation interface. Assuming that all photons with energies above 3.5 eV de-passivate the interface is in agreement with our experimental results.

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Section: Resultssupporting

confidence: 89%

UV-induced degradation of PERC solar modules with UV-transparent encapsulation materials

Witteck

Veith‐Wolf

Schulte‐Huxel

et al. 2017

Prog. Photovolt: Res. Appl.

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“…The ion bombardment of ionized species on the film surface during the deposition leads to the densification of the film, resulting in an increase in film density. 22) We speculate that the higher N 2 gas flow ratio disturbs the ion bombardment, resulting in a decrease in film density. The SiN film with a higher density tends to stretch, resulting in a higher compressive stress.…”

Section: Resultsmentioning

confidence: 86%

Effect of N₂ Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH₄–NH₃–N₂–He Gas Mixture on Stress Relaxation of Silicon Nitride

Murata¹,

Miyagawa²,

Matsuura³

et al. 2010

Jpn. J. Appl. Phys.

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The effects of N2 gas flow ratios in silicon nitride deposition with SiH4–NH3–N2–He gas mixtures at a temperature of 275 °C on stress relaxation have been investigated. We have demonstrated that film stress can be controlled in the range from -692 MPa (compression) to 170 MPa (tension) by increasing N2 gas flow ratio. From the evaluation of the composition ratio of N/Si, film density, and bonding structure, the relationships between film stress and these properties are investigated. The amount of nitrogen incorporated into the film as N–H bonds increased with increasing N2 flow ratio, resulting in a higher composition ratio of N/Si. At a higher N2 gas flow ratio, excess N2 gas in the plasma may disturb the ion bombardment of ionized species on the film surface, resulting in a decrease in the film density. The higher N2 gas flow ratio leads to the generation of a Si–N bonding structure with a larger bond angle at the nitrogen atom site due to bond-strain relaxation, leading to a higher frequency of Si–N stretching vibration. Therefore, a nitrogen-richer SiN film with many N–H bonds and a lower film density exhibits bonding structures with a lower bond strain, leading to the relief of film stress.

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“…The high‐temperature fits consist of a sum of Debye and Einstein heat capacity functions of the form:

C = n_{1} \cdot D (\frac{{normalΘ}_{D}}{T}) + m_{1} \cdot E (\frac{{normalΘ}_{E}}{T}) + A_{1} \cdot T

where

D ({normalΘ}_{D} / T)

and

E ({normalΘ}_{E} / T)

are Debye and Einstein functions;

m_{1}

n_{1}

{normalΘ}_{D}

, and

Θ_{E}

are all adjustable parameters; (

n_{1} + m_{1}

) should be approximately equal to the number of atoms in the formula unit or unit cell. The characteristic Debye temperature

{normalΘ}_{D}

obtained from the fitting shows that a‐SiNH #240 has the highest

{normalΘ}_{D}

(1261 K).…”

Section: Resultsmentioning

confidence: 99%

Thermodynamics of amorphous SiN(O)H dielectric films synthesized by plasma‐enhanced chemical vapor deposition

et al. 2017

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Thin films of amorphous SiNH (a-SiNH) and amorphous SiNOH (a-SiNOH) synthesized by plasma-enhanced chemical vapor deposition (PECVD) are used extensively in the semiconductor industry, but little is known regarding their thermodynamic stability, and there are several long-term reliability issues for these materials. To address the stability issues, a detailed thermodynamic investigation has been conducted on a series of a-SiNH, and a-SiNOH dielectric films. Hightemperature oxidative drop-solution calorimetry in molten sodium molybdate solvent at 1075 K was utilized to determine the formation enthalpies from the elements and from crystalline counterparts/gaseous products. Together with entropy data derived from cryogenic heat capacity measurements, we confirmed that the incorporation of more hydrogen and oxygen leads to more negative enthalpies and Gibbs free energies of formation from elements. Coupled with FTIR structural analysis, the thermochemical data suggest that the Si-H 2 chain structure and Si-O-Si bonding configurations provide the system with extra thermodynamic stability. However, the Gibbs free energies of formation from crystalline constituents and gaseous products are either positive or nearly zero, indicating that these amorphous films are not stable against decomposition, which may cause problems in high-temperature applications.

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Free energy model for the analysis of bonding in a-SixNyHz alloys

Cited by 23 publications

References 1 publication

UV-induced degradation of PERC solar modules with UV-transparent encapsulation materials

UV-induced degradation of PERC solar modules with UV-transparent encapsulation materials

Effect of N₂ Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH₄–NH₃–N₂–He Gas Mixture on Stress Relaxation of Silicon Nitride

Thermodynamics of amorphous SiN(O)H dielectric films synthesized by plasma‐enhanced chemical vapor deposition

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Free energy model for the analysis of bonding in a-SixNyHz alloys

Cited by 23 publications

References 1 publication

UV-induced degradation of PERC solar modules with UV-transparent encapsulation materials

UV-induced degradation of PERC solar modules with UV-transparent encapsulation materials

Effect of N2 Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH4–NH3–N2–He Gas Mixture on Stress Relaxation of Silicon Nitride

Thermodynamics of amorphous SiN(O)H dielectric films synthesized by plasma‐enhanced chemical vapor deposition

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Effect of N₂ Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH₄–NH₃–N₂–He Gas Mixture on Stress Relaxation of Silicon Nitride