The electroluminescence emission spectrum of forward‐biased MIS diodes on high‐purity single crystal CdS is studied over the temperature range 50 to 290 K. At room temperature the emission consists of two intense bands in the green at (5135 ± 25) and (5300 ± 15) A, while at lower temperatures considerably more structure is observed. Thus at 50 K free and bound exciton emission is particularly prominent. Evidence is presented to suggest that the band at (5135 ± 25)Å at room temperature is associated with free exciton recombination following scattering from free electrons in the conduction band. The band at (5300 ± 15)Å is attributed to free exciton recombination with the emission of two longitudinal optical phonons. The photoluminescence emission of asgrown CdS crystals is compared with that of crystals rendered semiconducting by heat treatment in molten cadmium. This treatment suppresses the free‐to‐bound (HES) and bound‐to‐bound edge emission, as well as the I1 bound exciton line, but enhances the free exciton emission, which is also preferentially excited in electroluminescence.