Free excitons in room-temperature photoluminescence of GaAs-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>multip

Dawson, Philip E.; Duggan, G.; Ralph, H. I.; Woodbridge, K.

doi:10.1103/physrevb.28.7381

Cited by 68 publications

(20 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3(a) really evolve from QW transitions. Furthermore, the observed double-peak structure agrees well with previous studies [25,26]. Interface roughness broadens the observed PL peaks, but we do not observe a splitting of the PL emission, which would originate from the terraces larger than the exciton diameter [27].…”

Section: Resultssupporting

confidence: 92%

See 1 more Smart Citation

An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study

Pakarinen

Polojärvi

Laukkanen

et al. 2008

Applied Surface Science

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 92%

“…Growth temperature was 580 C, as measured by an optical pyrometer. By varying the As flux, the applied As/Ga(Al) flux ratio was from 7 (25) to 24(86).…”

mentioning

confidence: 99%

An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study

Pakarinen

Polojärvi

Laukkanen

et al. 2008

Applied Surface Science

View full text Add to dashboard Cite

“…On the other hand, significant differences in the PL spectra have been reported for room temperature measurements. Some authors [7] claimed that, even a t room temperature, the main P L spectra are due to radiative recombination of free excitons while other authors stated [8] that room temperature luminescence is due to free carrier radiative recombinations.…”

Section: Introductionmentioning

confidence: 98%

Temperature Dependence of the Photoluminescence in GaAsGaAlAs Multiple Quantum Well Structure

Chiari

Colocci

Fermi

et al. 1988

Physica Status Solidi (b)

View full text Add to dashboard Cite

The temperature dependence of the photoluminescence (PL) of GaAs/GaAlAs multiple quantum wells is investigated. Emissions related t o transitions between n = 1 , 2 , 3 electron and hole subbands are observed. Theoretical evaluation of the energy levels fits nicely the experimental data. The temperature dependence of peak position and photoluminescence intensity and the dependence of P L intensity on the power excitation show that there are three different temperature regions. At low temperatures (22 t o 40 K) the main emission is ascribed t o exciton recombination while at temperatures higher than 100 K it can be attributed t o free carrier recombination. In the intermediate temperature region the P L involves both, excitonic and free carrier recombination. Thermally activated non-radiative recombination processes strongly reduce the luminescence quantum efficiency.Es wird die Temperaturabhangigkeit der Photolumineszenz (PL) von GaAs/GaAlAs-Mehrfachquantenwells untersucht. Emissionen, die mit Ubergangen zwischen n = 1 , 2 , 3 Elektronen-und Locher-Subbander verknupft sind, werden beobachtet. Eine theoretische Entwicklung der Energieniveaus stimmt gut mit den experimentellen Werten uberein. Die Temperaturabhangigkeit der Lage des Maximums und Photolumineszenzintensitiit und die AbhLngigkeit der P1-Intensitat von der Anregung zeigt, daB drei verschiedene Temperaturbereiche existieren. Bei niedrigen Temperaturen (22 bis 40 K) wird die Hauptemission einer Exzitonenrekombination zugeschrieben, wahrend bei Temperaturen hoher als 100 K sie der Rekombination freier TrLger zugeordnet wird. I m mittleren Temperaturbereich schlieBt die P L sowohl Exzitonen-als auch freie Ladungstrager-Rekombination ein. Ein thermisch aktivierter, nichtstrahlender RekombinationsprozeB reduziert die Lumineszenzquantenausbeute.

show abstract

“…Still it is possible to see resonant excitonic [24][25][26][27][28] effects at room temperature (k B T $ 26 meV). Unlike bulk material, these barriers oppose spatial separation of electrons and holes along the confinement direction.…”

Section: Experimental Results and Analysesmentioning

confidence: 99%

“…[19][20][21][22] These excitons also undergo excitonic Mott transition 23 from a neutral excitonic phase to a conducting electron-hole plasma (EHP) phase at higher densities. However, even at room temperature, the formation of excitons [24][25][26][27][28] can influence optical spectra of semiconductor quantum structures.…”

Section: Introductionmentioning

confidence: 99%

Negative activation energy and dielectric signatures of excitons and excitonic Mott transitions in quantum confined laser structures

Bhunia

Bansal

Henini

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

Mostly, optical spectroscopies are used to investigate the physics of excitons, whereas their electrical evidences are hardly explored. Here, we examined a forward bias activated differential capacitance response of GaInP/AlGaInP based multi-quantum well laser diodes to trace the presence of excitons using electrical measurements. Occurrence of "negative activation energy" after light emission is understood as thermodynamical signature of steady state excitonic population under intermediate range of carrier injections. Similar corroborative results are also observed in an InGaAs/GaAs quantum dot laser structure grown by molecular beam epitaxy. With increasing biases, the measured differential capacitance response slowly vanishes. This represents gradual Mott transition of an excitonic phase into an electron-hole plasma in a GaInP/AlGaInP laser diode. This is further substantiated by more and more exponentially looking shapes of high energy tails in electroluminescence spectra with increasing forward bias, which originates from a growing non-degenerate population of free electrons and holes. Such an experimental correlation between electrical and optical properties of excitons can be used to advance the next generation excitonic devices. Published by AIP Publishing. [http://dx

show abstract

Free excitons in room-temperature photoluminescence of GaAs-AlxGa1−xAsmultip

Cited by 68 publications

References 10 publications

An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study

An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study

Temperature Dependence of the Photoluminescence in GaAsGaAlAs Multiple Quantum Well Structure

Negative activation energy and dielectric signatures of excitons and excitonic Mott transitions in quantum confined laser structures

Contact Info

Product

Resources

About