Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy

Park, Sung S.; Park, Il-W.; Choh, Sung Ho

doi:10.1143/jjap.39.l1141

Cited by 164 publications

(108 citation statements)

References 7 publications

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“…We note that the ODMR was obtained on PL from the top (growth-surface) side of this material which was mechanically polished and reactive ion etched. Recent X-ray, AFM, TEM, and Raman scattering measurements [11][12][13][14] all indicate the high crystalline quality of this HVPE GaN. In particular, similar to that found for the GaN homoepitaxial layers, dislocation densities o10 7 cm À2 were revealed by TEM images [11].…”

Section: à2supporting

confidence: 71%

“…Recent X-ray, AFM, TEM, and Raman scattering measurements [11][12][13][14] all indicate the high crystalline quality of this HVPE GaN. In particular, similar to that found for the GaN homoepitaxial layers, dislocation densities o10 7 cm À2 were revealed by TEM images [11]. Furthermore, variable-temperature Hall effect measurements [12,15] ) and, in addition, the highest low-temperature electron Hall mobilities (B8000 cm 2 / V s) attained to date in bulk GaN.…”

Section: à2supporting

confidence: 70%

“…Al 2 O 3 substrate [11]. We note that the ODMR was obtained on PL from the top (growth-surface) side of this material which was mechanically polished and reactive ion etched.…”

Section: à2mentioning

confidence: 99%

See 2 more Smart Citations

Magnetic resonance studies of defects in GaN with reduced dislocation densities

Glaser¹,

Freitas²,

Braga³

et al. 2001

Physica B: Condensed Matter

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Section: à2supporting

confidence: 71%

Section: à2supporting

confidence: 70%

See 1 more Smart Citation

Magnetic resonance studies of defects in GaN with reduced dislocation densities

Glaser¹,

Freitas²,

Braga³

et al. 2001

Physica B: Condensed Matter

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“…1 High quality GaN bulk substrates can be produced by the hydride vapor phase epitaxy growth of thick GaN layers on sapphire and subsequent separation from the sapphire substrate. 2 The current cost of these fs-GaN wafers is very high. Therefore, large scale production of these new devices would require an important decline in fs-GaN price to compete with the alternative technologies (e.g., SiC).…”

Section: Introductionmentioning

confidence: 99%

Bulk GaN Ion Cleaving

Moutanabbir

Gösele

2010

Journal of Elec Materi

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Bulk or freestanding GaN is a key material in various devices other than the blue laser diodes. However, the high cost of bulk GaN wafers severely limits the large scale exploitation of these potential technologies. In this paper, we discuss some engineering issues involved in the application of the ion-cut process to split a thin layer from 2-inch freestanding GaN. This process combines the implantation of light ions and wafer bonding and can possibly be used to reduce the cost of the fabrication of GaN-based devices by allowing the transfer of several bulk quality thin layers from the same donor wafer. To achieve this multi-layer transfer several conditions must be fulfilled. Here issues related to bulk GaN surface irregularities and wafer bowing are discussed. We also describe a method to circumvent most of these problems and achieve high quality bonding.

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“…In order to reduce the cost of these bulk materials one approach would be to implement the ion-cut process. [10][11][12] The ion-cut process, which is based on ion (H and/or He) implantation and wafer bonding, is used to transfer crystalline layers onto substrates that produce heterostructures that cannot be produced by other processes such as epitaxy.AlN semiconductor materials exhibit the largest direct bandgap (6.2 eV) in the III-nitride family. 13 Due to its high melting point (3237 • K) and high thermal conductivity (285 W/mK), 14 AlN became the most promising material for deep ultraviolet (DUV) solid-state light sources.…”

mentioning

confidence: 99%

Effect of Hydrogen Implantation on the Mechanical Properties of AlN throughout Ion-Induced Splitting

Mamun

Tapily

Moutanabbir

et al. 2018

ECS J. Solid State Sci. Technol.

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The ability to transfer bulk quality III-N thin layers onto foreign platforms is a powerful strategy to enable high-efficiency and low-cost optoelectronic devices. Ion-cut using sub-surface defect engineering has been an effective process to split and transfer a variety of semiconductors. With this perspective, hydrogen-implanted AlN samples were annealed in air at temperatures ranging from 300 • C to 600 • C for 5 min to study the influence of pre-layer splitting treatments on the nanomechanical properties. There is a clear dependence of the hardness on implanted hydrogen implantation fluence. We observe that the as-implanted hardness increased from 18 GPa for the virgin reference sample to ∼25 GPa for the highest fluence of 3 × 10 17 H cm −2 prior to annealing. In the case of reference single crystalline Si samples, a significant drop in the hardness and elastic modulus is observed in the H implantation-induced damage zone subsequent to thermal annealing , while for crystalline epitaxial AlN samples with 0.5 × 10 17 and 2.0 × 10 17 H implant fluences, the hardness increases and peaks until the thermal annealing temperature reaches 350 • C and subsequently begins to drop thereafter for higher annealing temperatures. However, for the 1.0 × 10 17 H implantation fluence the hardness continues to increase with increasing thermal annealing temperature. The remarkable growth in the optoelectronic industry is attributed to group III-nitride compound semiconductors such as GaN, AlN, and InN. [1][2][3][4][5][6] Due to the wide bandgap nature and the piezoelectric properties of AlN and GaN 7,8 and the high electron mobility and small bandgap of InN, 9 significant interest in the fabrication of these materials is palpable.The exploitation of the full potential of the group III-nitride compound semiconductors in the emerging optoelectronic technologies such as deep ultraviolet DUV light emitting diodes LEDs, surface acoustic wave sensors (SAWs), RF filters in MEMS technologies etc., faces major challenges namely the lack of or the high cost of high crystalline quality material. Although bulk group III-nitride wafers are excessively expensive, only 2-4 inch bulk GaN wafers are commercially available. In general, due to its high thermal stability, single crystal sapphire substrates are used for the epitaxial growth of group III-nitride layers. Due to lattice and thermal mismatch between the III-N semiconductor materials and growth on substrates such as sapphire, it is documented that the grown layers tend to be defective with misfit dislocations. Reducing interfacial defect density requires the growth of very thick layers which is a very lengthy process. Bulk wafers are obtained from these thick layers. In order to reduce the cost of these bulk materials one approach would be to implement the ion-cut process. [10][11][12] The ion-cut process, which is based on ion (H and/or He) implantation and wafer bonding, is used to transfer crystalline layers onto substrates that produce heterostructures that cannot be produced by other...

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Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy

Cited by 164 publications

References 7 publications

Magnetic resonance studies of defects in GaN with reduced dislocation densities

Magnetic resonance studies of defects in GaN with reduced dislocation densities

Bulk GaN Ion Cleaving

Effect of Hydrogen Implantation on the Mechanical Properties of AlN throughout Ion-Induced Splitting

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