Freestanding doped silicon nanocrystals synthesized by plasma

Ni, Zhenyi; Pi, Xiaodong; Ali, Muhammad; Zhou, Shu; Nozaki, Tomohiro; Yang, Deren

doi:10.1088/0022-3727/48/31/314006

Cited by 36 publications

(23 citation statements)

References 98 publications

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“…As p‐type dopant we consider the B atom and as n‐type dopant the P atom, owing the fact that doping of Si‐NCs with boron and phosphorus has been investigated in detail. Throughout the paper we consider substitutional impurities since several experimental studies point toward this type of impurity incorporation …”

Section: Methodsmentioning

confidence: 99%

First Principle Studies of B and P Doped Si Nanocrystals

Marri

Degoli

Ossicini

2017

Physica Status Solidi (a)

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The properties of n- and p-doped silicon nanocrystals obtained through ab initio calculations are reviewed here. The aim is the understanding of the effects induced by substitutional doping on the structural, electronic and optical properties of free-standing and matrix-embedded Si nanocrystals. The preferential positioning of the dopants and their effects on the structural properties with respect to the undoped case, as a function of the nanocrystals diameter and termination, are identified through total-energy considerations. The localization of the acceptor and donor related levels in the band gap of the Si nanocrystals, together with the impurity activation energy, are discussed as a function of the nanocrystals size. The dopant induced differences in the optical properties with respect to the undoped case are presented. Finally, the case of B and P co-doped nanocrystals is discussed showing that if carriers are perfectly compensated, the Si nanocrystals undergo a minor structural distortion around the impurities inducing a significant decrease of the impurities formation energies with respect to the single doped case. Due to co-doping, additional peaks are introduced in the absorption spectra, giving rise to a size-dependent red shift of the absorption spectra

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Section: Methodsmentioning

confidence: 99%

First Principle Studies of B and P Doped Si Nanocrystals

Marri

Degoli

Ossicini

2017

Physica Status Solidi (a)

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“…Moreover doping efficiency depends both on Si-NCs size and on Si-NCs environment [120]. For a review on the experimental results regarding doping efficiency and electrical activity of doped Si-NCs the reader is referred to Refs: [89,90]. The doped Si-NCs have a good crystallinity, showing that the lattice spacing with respect to undoped Si-NCs is not affected for P-doped Si-NCs, whereas it is slightly reduced for B-doped ones, owing to the smaller size of the B atom [114,123] Experiments pointed out that the hyperfine splitting (HFS) shows a clear size dependence [130] and that impurities are mainly incorporated in substitutional sites [114,120,131,132,134].…”

Section: Free-standing Nanocrystalsmentioning

confidence: 99%

Doped and codoped silicon nanocrystals: The role of surfaces and interfaces

Marri

Degoli

Ossicini

2017

Progress in Surface Science

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Si nanocrystals have been extensively studied because of their novel properties and their potential applications in electronic, optoelectronic, photovoltaic, thermoelectric and biological devices. These new properties are achieved through the combination of the quantum confinement of carriers and the strong influence of surface chemistry. As in the case of bulk Si the tuning of the electronic, optical and transport properties is related to the possibility of doping, in a controlled way, the nanocrystals. This is a big challenge since several studies have revealed that doping in Si nanocrystals differs from the one of the bulk. Theory and experiments have underlined that doping and codoping are influenced by a large number of parameters such as size, shape, passivation and chemical environment of the silicon nanocrystals. However, the connection between these parameters and dopant localization as well as the occurrence of self-purification effects are still not clear. In this review we summarize the latest progress in this fascinating research field considering free-standing and matrix-embedded Si nanocrystals both from the theoretical and experimental point of view, with special attention given to the results obtained by ab-initio calculations and to size-, surface- and interface-induced effects

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“…Analogous to bulk Si, signifi cant efforts have been devoted to doping Si NCs to realize the full potential of Si NCs. [16][17][18] It has been recently shown that hyperdoping (i.e., doping with a dopant concentration exceeding the dopant solubility) enables interesting properties such as superconductivity spectroscopy are employed to study the structures of all the Si NCs. Density functional theory (DFT) study has been employed to assist the structural analysis.…”

Section: Introductionmentioning

confidence: 99%

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Zhou

et al. 2016

Advanced Optical Materials

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and intermediate-band transition for bulk Si. [ 19,20 ] For Si NCs, hyperdoping is also emerging as an effective means to obtain novel properties. [21][22][23][24][25][26] For instance, localized surface plasmon resonance (LSPR) may occur to hyperdoped Si NCs. [21][22][23] And the energy of the LSPR can be conveniently tuned by the doping level.It is well known that the properties of intrinsic Si NCs are critically dependent on the NC size. [ 27,28 ] However, the size effect for hyperdoped Si NCs has been hardly explored. Previous work simply focused on the effect of the doping level. It has been recently predicted that the LSPR of hyperdoped Si NCs can be controlled by not only the doping level but also the NC size. [ 29 ] This highlights that the critical role played by the size effect may remain for Si NCs after hyperdoping. Therefore, it is of great interest to also investigate the size effect for hyperdoped Si NCs. Knowledge concerning the effect of the NC size on the dependence of the properties of hyperdoped Si NCs on the doping level should be invaluable for the synthesis of hyperdoped Si NCs with desired functionality.In this work, Si NCs hyperdoped with different B-doping levels are considered. The dependence of the physical properties of hyperdoped Si NCs on the NC size is examined. It is shown that the largest Si NCs undergo a stronger reduction of the average lattice spacing upon doping with respect to the smallest ones. While Raman, subbandgap optical absorption and the LSPR spectra are all modifi ed with increasing B concentrations in Si NCs, they also indicate that the largest Si NCs are less affected by disorder and charge carrier surface scattering. As a result, there exists a range of doping concentrations where the LSPR energy can be blueshifted as the NC size decreases. Results and DiscussionBoth B-hyperdoped and undoped Si NCs with different sizes have been synthesized by using SiH 4 -based nonthermal plasma. [ 6,[30][31][32] The atomic concentrations of B in B-hyperdoped Si NCs are ≈17%, 36%, and 60%, which are measured with inductively coupled plasma-atomic emission spectroscopy (ICP-AES). Transmission electron microscopy (TEM) and Raman

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Freestanding doped silicon nanocrystals synthesized by plasma

Cited by 36 publications

References 98 publications

First Principle Studies of B and P Doped Si Nanocrystals

First Principle Studies of B and P Doped Si Nanocrystals

Doped and codoped silicon nanocrystals: The role of surfaces and interfaces

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

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