Freewheeling diode reverse-recovery failure modes in IGBT applications

Rahimo, Munaf; Shammas, N.Y.A.

doi:10.1109/28.913734

Cited by 108 publications

(43 citation statements)

References 2 publications

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“…In Figure 15 the reverse recovery waveforms relative to the two designs are reported and a superior softness of the new design is highlighted. While the DEV1 structure exhibit a pronounced voltage oscillation (due to the snappy behavior [20]) at the end of the reverse recovery phase (di/dt = 1000 µA/µs), the DEV2 structure does not show any oscillation and the current waveform has soft transitions at any time. The comparison between the two designs is reported in Table 1.…”

Section: Resultsmentioning

confidence: 99%

Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes

Maresca

Romano

et al. 2018

Energies

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Abstract:Silicon power diodes are used to design different types of electrical energy systems. Their performance has been improved substantially, as a result of a concentrated research efforts that have taken place in the last two decades. They are considered immune to electrostatic discharge (ESD) failures, since usually they withstand an avalanche energy one order of magnitude higher than that of the ESD. Consequently, few works consider this aspect. However, it was observed that during the mounting of power diodes in automotive systems (e.g., with operators touching and handling the devices), ESD events occur and devices fail. In this paper the ESD capability of 600 V fast recovery epitaxial diode (FRED) is analyzed by means of Technology Computer-Aided Design (TCAD) simulations, theoretical analyses and experimental characterization. Two doping profiles are investigated in order to improve the ESD robustness of a standard device and an optimized doping profile is proposed. The proposed design exhibits a higher ESD robustness and this is due to its superior capability in keeping the current distribution uniform in the structure in a critical condition such as the impact ionization avalanche effect. Both experimental and numerical results validate the proposed design.

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Section: Resultsmentioning

confidence: 99%

Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes

Maresca

Romano

et al. 2018

Energies

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“…3.28 and 3.29) for a resistive load, but is reviewed below for the case of an inductive load. More detailed discussions can be found in [140,141]. During this time, I L ramps up with slope V DD /L until t d .…”

Section: H-bridge Motor Driver-ldmos Reverse Recoverymentioning

confidence: 97%

“…In this case, a very high di r /dt results from a total depletion of the stored charge during the recovery period producing a strong, destructive voltage overshoot. Various "softness" factors [141] have been proposed to quantify the onset of snappy behavior, dealing primarily with the ratio of di r /dt to di/dt or to τ rr .…”

Section: H-bridge Motor Driver-ldmos Reverse Recoverymentioning

confidence: 99%

High-Voltage and Power Transistors

El-Kareh¹,

Hutter²

2015

Silicon Analog Components

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This chapter focuses mainly on the drain-extended MOS transistor, DEMOS, for high voltage applications, and on the lateral double-diffused MOS transistor, LDMOS, for high power applications. In both cases, the drain is extended with a lightly-doped region, referred to as the drift region, to sustain the high voltage. The chapter begins with an analysis of the drift region and its optimization, typically by reduced surface-field (RESURF) techniques. The transistor switching performance is then analyzed, followed by a discussion of DEMOS and LDMOS design considerations and characteristics. High-voltage and high-current effects are then described, including quasi-saturation, body current, on-state breakdown, and safe operating area (SOA). The chapter concludes with selected high-voltage device applications. IntroductionThe MOSFETs discussed in Chap. 6 are designed for digital, analog, mixed-signal, and RF applications that operate in the low-to-medium voltage range of about 0.8-6 V. Many analog applications, however, require transistors that can handle voltages above 20 V and currents in the ampere range. Those transistors are referred to as high-voltage and power transistors. This chapter provides a comprehensive analysis of the drain-extended MOS transistor (DEMOS), for high-voltage and low-current applications, and the lateral double-diffused MOS (LDMOS) transistor, LDMOS, for power applications. (The "D" in LDMOS describes the sequential (double) diffusion of boron and arsenic through the same oxide opening, defining a precise channel length (Chap. 9). The "L" means that the current path is parallel to the silicon surface (lateral), as opposed to "V" in VDMOS where the current is nearly vertical to the silicon surface.) Schematic cross sections of both transistors (Table 7.1). The DEMOS is typically processed without added process complexity, whereas the LDMOS requires optimization of the P-body and N-drift regions to achieve high voltages and currents while minimizing the drain-to-source resistance and transistor area.The interest in bipolar, CMOS, and DMOS (BCD) technologies has been driven primarily by the proliferation of portable electronics, automotive electronics, and the need for energy efficiency. These applications cluster around different operating points, with 24 V for portable electronics; 60 V for automotive, solar, and LED backlighting; 85 V for power over Ethernet; 120 V for telecommunication; and 700 V for offline LED lighting, consumer, and industrial applications. As a result, BCD is now the technology of choice to realize power ICs by most integrated device manufacturers (IDM) and foundries [1][2][3][4][5].This chapter focuses mainly on transistors with voltage capabilities in the range of 20-700 V, where the bulk of the product applications lie.

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“…If the power switch does not turn off earlier, the leg is a full short-circuit and the energy stored in the DC capacitor bank can result in explosion of the IGBT modules and stresses on the drivers [4]. Under a high stress condition, the freewheeling diode can fail shortly after the reverse recovery peak voltage that can, in turn, lead to IGBT short-circuit during turn-on because of excessive inrush current [13].…”

Section: A Power Switch Short-circuitmentioning

confidence: 99%

Detection and Diagnosis Solutions for Fault-Tolerant VSI

Cordeiro¹,

Palma²,

Maia³

et al. 2014

Journal of Power Electronics

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This paper presents solutions for fault detection and diagnosis of two-level, three phase voltage-source inverter (VSI) topologies with IGBT devices. The proposed solutions combine redundant standby VSI structures and contactors (or relays) to improve the fault-tolerant capabilities of power electronics in applications with safety requirements. The suitable combination of these elements gives the inverter the ability to maintain energy processing in the occurrence of several failure modes, including short-circuit in IGBT devices, thus extending its reliability and availability. A survey of previously developed fault-tolerant VSI structures and several aspects of failure modes, detection and isolation mechanisms within VSI is first discussed. Hardware solutions for the protection of power semiconductors with fault detection and diagnosis mechanisms are then proposed to provide conditions to isolate and replace damaged power devices (or branches) in real time. Experimental results from a prototype are included to validate the proposed solutions.

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Freewheeling diode reverse-recovery failure modes in IGBT applications

Cited by 108 publications

References 2 publications

Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes

Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes

High-Voltage and Power Transistors

Detection and Diagnosis Solutions for Fault-Tolerant VSI

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