Frequency and gate voltage effects on the dielectric properties of Au/SiO2/n-Si structures

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

“…Such behavior of C shows that there are various kinds of interface states with different life times and they can follow ac signal especially at low and intermediate frequencies but cannot follow at high frequencies especially in the depletion region of structure. The capacitance of such an inhomogeneous layer at the semiconductor/insulator interface acts in a series with the insulator capacitance causing frequency dispersion [9,20,21,23]. Because at lower frequencies, the interface states can easily follow an ac signal and yield an excess capacitance (C ss ) and conductance (G ss ).…”

“…is commonly used to separate the bulk and the surface phenomena and to determine the bulk dc conductivity of the material [23,[39][40][41][42]. Generally, to extract as much information as possible, dielectric relaxation spectroscopy data are used in the electric modulus formalism [43].…”

“…Thus, the evaluation of the electric modulus as a function of frequency permits to detect the presence of relaxation processes in the studied materials [44]. In order to study dielectric dispersion in the (Ni/Au)/Al 0.3 Ga 0.7 N/ AlN/GaN heterostructures, we have used the complex electric modulus (M Ã ) as defined by following relation [23,[39][40][41][42] as, This dispersion is fairly clear in Fig. 5a.…”

“…The reason for the existence of DD and N ss is the interruption of the periodic lattice structure at the surface, surface preparation, impurity concentration of semiconductor and the formation of barrier high at M/S interface [20][21][22]. Since the surface capacitance (C ss ) depends strongly on the frequency and applied bias voltage, both the capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics are strongly affected [21][22][23][24]. Therefore, it is important to include the effect of frequency, applied bias voltage and interfacial insulator layer native or deposited in the investigation of electrical characteristics or dielectric properties.…”

Enhancement of Dielectric Characteristics of Polyvinyl Alcohol (PVA) Interfacial Layer in Au/PVA/n‐Si Structures by Bi2O3Disperse

“…The values of e′ and e″, in the case of admittance measurements, can be expressed and follows [25][26][27][28][29][30] The values of e′ and e″, in the case of admittance measurements, can be expressed and follows [25][26][27][28][29][30] …”