Frequency Dependence of Hopping Conductance in Electron Irradiated Semiconductors

Abstract

A sufficient degree of electron irradiation induced damage in Si, Ge, InSb, and InAs has allowed the observation of hopping conductance having a sublinear frequency dependence of s -ws with s _< 1. The dependence of s on both the degree of the induced damage and on temperature is studied and discussed in terms of the quantum mechanical tunnelling and the correlated barrier hopping mechanisms.