2021
DOI: 10.1007/s10854-021-05482-9
|View full text |Cite
|
Sign up to set email alerts
|

Frequency dependence of the dielectric properties of Au/(NG:PVP)/n-Si structures

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 34 publications
(3 citation statements)
references
References 50 publications
0
3
0
Order By: Relevance
“…After a certain frequency, both the Z 0 and Z 00 values remain constant. 54 The Nyquist plots of WO 3 (Fig. S2, ESI †) and WO 3 -MgO (Fig.…”
Section: Electrochemical Impedance Studiesmentioning
confidence: 99%
“…After a certain frequency, both the Z 0 and Z 00 values remain constant. 54 The Nyquist plots of WO 3 (Fig. S2, ESI †) and WO 3 -MgO (Fig.…”
Section: Electrochemical Impedance Studiesmentioning
confidence: 99%
“…Finally, Au dots with 7.85×10 −3 cm 2 were also thermally evaporated onto front of (n-Si/Au) and (NG:PVP/n-Si/Au) wafers and so both the fabrication of MS and MPS type SDs were completed. Also, more detailed information on experimental details can be found as clearly in our previous-studies [39,40]. A diagram of the fabrication steps/procesess and measurement-system was also given in figure 1.…”
Section: Methodsmentioning
confidence: 99%
“…However, these properties can be modified by incorporating fillers into the polymer matrix. 6 The resulting changes depend on several factors, including the specific polymer-filler combination, their concentration, and the presence of an external field. One notable polymer-filler pair is polyvinyl alcohol (PVA) and graphene oxide (GO).…”
Section: Introductionmentioning
confidence: 99%