Frequency dependence of the properties of a ferroelectric heterostructure

Cui, Lian; Che, Jixin

doi:10.1016/j.cjph.2022.02.003

Cited by 3 publications

(1 citation statement)

References 32 publications

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“…This typical nature of the resistive leakage in PE loops is greatly explained in the supporting library of Radiant (https://www.ferrodevices.com/support-library/, document name-'Ferroelectric components-a tutorial') Technologies website. We observe the typical trend seen in ferroelectric materials, where with the increase in frequency, the polarisation greatly reduces as the contributions to the polarisation reduce [74,75].…”

Section: Ferroelectric Studiessupporting

confidence: 52%

Comprehensive investigation into the influence of oxygen vacancies on the ferroelectric properties of spin coated bismuth ferrite thin films

N V,

Bayari,

Kumar M V

et al. 2024

Phys. Scr.

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Bismuth ferrite (BFO) is a prime candidate for room-temperature magnetoelectric coupling and multiferroic applications. The rhombohedral R3c phase of BFO is the source of many properties, but the phase purity and oxygen vacancies are still the biggest obstacles to its real-world application. Considering these facts, the present work investigates the effects of oxygen vacancies on the functional properties through manipulation of drying temperatures of spin-cast films, especially at temperatures around 280 °C, where both the secondary phase and oxygen vacancies are prevalent. One of the biggest sources of oxygen vacancy is bismuth volatilisation and our work deals with the situation head-on uncovering the effect of bismuth volatilisation on functional properties. The structural properties were studied using X-ray diffraction (XRD), and deeper insights into the surface topography of the samples were obtained using AFM imaging. The electrical and dielectric characteristics help distinguish and analyse the samples in terms of the presence of resistive switching. PUND studies were performed to determine the ferroelectric properties of the samples. A fifty percent reduction in the oxygen vacancies in the presence of secondary phases was observed when compared with the phase-pure sample, as shown by the XPS analysis. Deeper insights were provided into the valence band spectra by first-principles studies. This work shows that phase purity may not be the singular condition for enhancing functional properties, and fine-tuning the presence of secondary phases and oxygen vacancies may be the way forward. The ferroelectric polarisation in one of the samples exhibits a notably higher value when using chemical solution deposition methods, making it a promising candidate for memory devices.

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Section: Ferroelectric Studiessupporting

confidence: 52%

Comprehensive investigation into the influence of oxygen vacancies on the ferroelectric properties of spin coated bismuth ferrite thin films

N V,

Bayari,

Kumar M V

et al. 2024

Phys. Scr.

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Dynamic antiferroelectric behavior of dielectric susceptibility of a ferroelectric heterostructure

Cui

Che

2023

Physics Letters A

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Polarization of Bi2Se3 thin film toward non-volatile memory applications

et al. 2022

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In recent years, topological insulators have drawn growing interest as a unique electronic state of matter toward quantum information technology. Despite the logic devices with magnetization switching through spin–orbit torque or the topological magneto-electric effect, realizing memory devices based on topological insulators has been urged in quantum computing applications. In this work, we report the design and fabrication of a non-volatile memory device that employs polarization of Bi2Se3 thin films achieving fast memory speed, sufficient memory window, and good reliability. The Bi2Se3 film polarizes under an external electrical field with charges accumulated on the top and bottom surfaces separating the electrons and holes. Such polarization is much faster than the carrier tunneling in conventional floating-gate flash memory and ferroelectric-based memory devices. In addition, good memory retention and endurance properties have also been obtained, showing great potential in high-performance memory application in future topological insulator-involved information technology.

show abstract

Frequency dependence of the properties of a ferroelectric heterostructure

Cited by 3 publications

References 32 publications

Comprehensive investigation into the influence of oxygen vacancies on the ferroelectric properties of spin coated bismuth ferrite thin films

Comprehensive investigation into the influence of oxygen vacancies on the ferroelectric properties of spin coated bismuth ferrite thin films

Dynamic antiferroelectric behavior of dielectric susceptibility of a ferroelectric heterostructure

Polarization of Bi2Se3 thin film toward non-volatile memory applications

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