Frequency-Dependent Dielectric Parameters of Au/TiO2/n-Si (MIS) Structure

High-k 2D Sb2O3 Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process

“…Furthermore, the dielectric constant was found to decrease with an increase in frequency. The frequency dependence of k may be attributed to the existence of interfacial states …”

“…The frequency dependence of k may be attributed to the existence of interfacial states. 42 To demonstrate the utility of the synthesized α-Sb 2 O 3 for applications in practical devices and the general scaling potential of the method, we fabricated top-gated p-GaAs FETs using a ∼3 nm thick α-Sb 2 O 3 nanosheet as the gate oxide. These devices were fabricated by simply printing Sb 2 O 3 onto a GaAs wafer.…”

Recent Advances in Plasmonic Photocatalysis Based on TiO2 and Noble Metal Nanoparticles for Energy Conversion, Environmental Remediation, and Organic Synthesis

“…This process involves the hightemperature evaporation of pure metal and the metal vapors are allowed to deposit over the semiconductor surface. [116] In situ surface immobilization of Au NPs on TiO 2 nanosheets results in lower aggregation of metal NPs. [117] The Au NPs of variable sizes and densities have been synthesized by adjusting the thickness and compactness of the TiO 2 nanosheets.…”

Utilizing the synergistic effect between the Schottky barrier and field redistribution to achieve high-density, low-consumption, cellulose-based flexible dielectric films for next-generation green energy storage capacitors

“…4" rend="display" xml:id="eqn4"> σ = ωε 0 ε tan δ where ρ is the resistivity, 82,83 ε is inversely proportional to ρ , meaning that compared with the BZT single layer, the BZT sublayer in ZZS has lower ε , and thus suffers a higher electric field, and then a larger polarization is triggered. The same circumstance occurs in the SSZ.…”