Frequency Dependent Electrical Characteristics of Al/SiO ₂ /SiNWs/n-Si MOS Capacitors

FREQUENCY RESPONSE ON THE ELECTRICAL CHARACTERISTICS OF SiNWS BASED MOS CAPACITOR WITH HIGH-K MATERIAL

“…The thickness of VO2 was determined by measuring using the sun spectrometer reflectometer and the thickness was found to be 145nm. The samples with VO2 thin films were again transferred to the RF sputtering system for the purpose of forming both gate electrodes and back contact using Aluminium as a sputtering target and for more information readers are referred to [2]. After all the fabrication processes were completed the C-V measurements were carried out in the frequency ranging from 50 kHz to 1 MHz and the voltage was set between -10V and +10 V. The fabricated MOS capacitors based on SiNWs is given in Figure 1.…”

“…However, at high frequency these charges do not have sufficient time to respond effectively to the voltage being applied due to their larger life time. In other words, the contribution of the capacitance in the accumulation region is negligible [2], [9], [14]. measurements are dependent on the different parameters which include; the formation of interfacial layer, series resistance and trap charges [9], [16].…”

“…There are a variety of methods that have been formulated for the calculation of Rs. In this work, the Nichollian method was used and given by [2], [17].…”

“…On the other hand, these values shifted towards the inversion region this could be related to the various charges such as interface trap charge and oxide charge [15], [18]. The values of interface states density (Dit) were calculated from the following equations [2], [17].…”

“…As stated before in Fig. (3a) the interface states can easily follow the ac signal at low frequency while at high frequency these charges cannot follow the ac signal due to their large life time [1], [2], [16]. The C-V and Gm/𝜔-V measurements were corrected by using the Rs values from the strong accumulation.…”