2022
DOI: 10.1021/jacs.1c11545
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Frequency Dependent Silica Dissolution Rate Enhancement under Oscillating Pressure via an Electrochemical Pressure Solution-like, Surface Resonance Mechanism

Abstract: From atomic force microscopy (AFM) experiments, we report a new phenomenon in which the dissolution rate of fused silica is enhanced by more than 5 orders of magnitude by simply pressing a second, dissimilar surface against it and oscillating the contact pressure at low kHz frequencies in deionized water. The silica dissolution rate enhancement was found to exhibit a strong dependence on the pressure oscillation frequency consistent with a resonance effect. This harmonic enhancement of the silica dissolution r… Show more

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Cited by 2 publications
(18 citation statements)
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“…Our tapping mode (TM) under water AFM experiments demonstrate the feasibility of using the (FEEPS etching to carry out nanolithography work on fused silica surfaces. Experiments investigating the effect of varying the AFM tip velocity upon the depth of the etched features showed that the process obeyed the same power law relationship between "contact time" and etching depth as was previously observed in hole etching experiments, [8] thus demonstrating the etching observed herein is dominated by the FEEPS etching mechanism. By varying the velocity of the AFM tip and hence, the dissolution time, gray-scale lithography that has proven challenging to obtain by others means became thus not only possible but also easy to design, giving features as deep as 60 nm in a single AFM tip pass (trace and retrace), comparable to what can be obtained on thermally sensitive polymers using a heated AFM probe.…”
Section: Discussionsupporting
confidence: 78%
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“…Our tapping mode (TM) under water AFM experiments demonstrate the feasibility of using the (FEEPS etching to carry out nanolithography work on fused silica surfaces. Experiments investigating the effect of varying the AFM tip velocity upon the depth of the etched features showed that the process obeyed the same power law relationship between "contact time" and etching depth as was previously observed in hole etching experiments, [8] thus demonstrating the etching observed herein is dominated by the FEEPS etching mechanism. By varying the velocity of the AFM tip and hence, the dissolution time, gray-scale lithography that has proven challenging to obtain by others means became thus not only possible but also easy to design, giving features as deep as 60 nm in a single AFM tip pass (trace and retrace), comparable to what can be obtained on thermally sensitive polymers using a heated AFM probe.…”
Section: Discussionsupporting
confidence: 78%
“…What is immediately noticeable is the high inverse dependence of the etched trench depth with the AFM tip velocity; the depth decreases from 65 nm at a velocity of 0.2 µm s −1 down to 0.76 nm at 600 µm s −1 . It was found that the obtained data were well fitted (correlation coefficient of 0.97) using the power law, characteristic of FEEPS processes [8] (see Equation ( 3))…”
Section: Localized Silica Etching Using Frequency Enhanced Electroche...mentioning
confidence: 91%
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