Frequency Doubler Based on a Lateral Multi-Channel GaN Schottky Barrier Diode for 5G Technology

Alathbah, Moath; Eblabla, Abdalla; Elgaid, K.

doi:10.1109/asdam50306.2020.9393861

2020 13th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) 2020

DOI: 10.1109/asdam50306.2020.9393861

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Frequency Doubler Based on a Lateral Multi-Channel GaN Schottky Barrier Diode for 5G Technology

Moath Alathbah

Abdalla Eblabla

K. Elgaid

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Frequency Doubler Based on a Lateral Multi-Channel GaN Schottky Barrier Diode for 5G Technology

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