The laser-induced damage threshold (LIDT) was measured
for a
Z
n
G
e
P
2
crystal exposed to 0.3–9.5 ps
1030-nm laser pulses. Single-pulse LIDT fluence was
∼
0.22
J
/
c
m
2
for the laser pulse widths of
0.3–3.5 ps and increased until
0.76
J
/
c
m
2
for 9.5-ps pulses. Multi-pulse LIDT
fluence for 0.3-ps pulses at repetition frequencies in the range of
100 Hz–1 kHz was
∼
0.053
J
/
c
m
2
and decreased further at higher,
multi-kHz, pulse repetition frequencies. The coating of the
Z
n
G
e
P
2
crystal surface with an
anti-reflection multi-layer thin film increased the multi-pulse LIDT
by one order of magnitude, up to
0.62
J
/
c
m
2
(about
2
T
W
/
c
m
2
). The significant increase in LIDT
coupled with a decrease in reflection losses provides a way to
cardinally improve efficiency of frequency conversion of popular 1-µm
ultrashort pulses into mid- and far-IR ranges with a thin AR-coated
Z
n
G
e
P
2
crystal sample.