Frequency reconfigurable substrate integrated waveguide (SIW) cavity F-shaped slot antenna

Abstract

This paper shows a frequency reconfigurable SIW F-slot suitable for some applications. Configurability is accomplished by embeddings PIN diode switches in the 'F' slot. The proposed antenna is equipped for exchanging between working band of 3.172 GHz to 3.606 GHz in four different narrow bands and it underpins the cognitive system for LTE2300, WiMAX and WLAN. For each case reflection coefficient is ascertained, it keeps up less than-10 dB all through the resonating frequency in all instances of diode switching. The electromagnetic energy is kept inside the cavity because of the frame of a metallic vias. In all instances of diodes exchanging, it's uncovered a decent effectiveness of efficiency and gain.

Wideband millimeter-wave substrate integrated waveguide cavity-backed antenna for satellites communications

“…9, No. 5, October 2020 : 1933 -1940 1936 the loss of radiation as well as the loss of return [20]. Although SIW can be described as a regular rectangular waveguide by constant propagation, waveguide mode, and cutoff frequency and guided wavelength, it should be noted that SIW has some unpleasant physical qualities compared to traditional rectangular waveguides.…”

Substrate integrated waveguide cavity backed frequency reconfigurable antenna for cognitive radio applies to internet of things applications

“…A schematic of the proposed frequency reconfigurable SIW cavity slot antenna with PIN diodes, which is a development and improvement of previous designs, is discussed in Reference . The arrangement of the SIW metallic structure composed of via‐hole arrays is shown in Figure .…”

A compact ultra-wideband (42-54 GHz) mm-Wave Substrate Integrated Waveguide (SIW) cavity slot antenna for of future wireless communications

“…shows the dimensions of vias' array Arrangement of the SIW composed by metallic by means of via-hole arrays as said before, SIW is made out of two parallel varieties of through via holes delimiting the TE10 wave spread zone, as its cutoff frequency is just branded with the width an of the waveguide as long as the substrate thickness or waveguide height 'h' is smaller than 'Wsiw'. Parameter 'Wsiw' between the two arrays decides the spread steady of the central mode, and parameters of through via holes 'D' and 'p' are set to limit the radiation loss and in addition the the return loss [20]. Despite the fact that SIW can be described by by propagation constant, waveguide mode, cutoff frequency and guided wavelength like a regular rectangular waveguide, it ought to be noticed that SIW has some unpleasant physical qualities as compared with traditional rectangular waveguides.…”

“…Modern trends in research into future wireless sensor networks based on SIW technology and the use of advanced SIW structures based on environmentally friendly technologies and materials. As per [20] the SIWs configurations allow for the realization of conventional rectangular waveguides in form of planar shape conducted in dielectric substrates by employing double rows of metal vias connecting the patch to the ground plane. SIW technology enables active components, passive structures and antennas to be integrated into a single substrate to avoid transitions and minimize parasitic effects and losses.…”