Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes

Campbell, Joe C.; Johnson, Bart; Qua, G.J.; Tsang, W. T.

doi:10.1109/50.19113

Cited by 64 publications

(29 citation statements)

References 19 publications

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“…It follows that, for any given device length, a single effective velocity can be used to assess the outcome of the competition between nonlocal effects on bandwidth for all but the lowest gains. The low gain frequency response, where the gain-bandwidth product is predicted to increase with gain, is in any case generally dominated by RC and transit time limitations [15].…”

Section: Discussionmentioning

confidence: 99%

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

Hambleton

Plimmer

et al. 2003

IEEE Trans. Electron Devices

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Article:Hambleton, P.J., Ng, B.K., Plimmer, S.A. et al. (2 more ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request.

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Section: Discussionmentioning

confidence: 99%

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

Hambleton

Plimmer

et al. 2003

IEEE Trans. Electron Devices

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“…A separate absorption and multiplication (SAM) structure has been commonly used to improve the gain-bandwidth product and reduce the multiplication noise [43], [44]. The VPD scheme has been popular for the APD, and a bandwidth of 17 GHz, an efficiency of 74%, and a multiplication factor of four, which results in a bandwidth-efficiency product of 50 GHz, have been obtained at a long wavelength by a superlattice SAM-APD with a 0.8-m-thick photoabsorption layer [45].…”

Section: E Other Pd'smentioning

confidence: 99%

Ultrawide-band/high-frequency photodetectors

Kato

1999

IEEE Trans. Microwave Theory Techn.

323

127

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The two main trends in the progress of ultrawideband/high-frequency photodetectors (PD's), improving the bandwidth-efficiency product and obtaining a high saturation current, are reviewed. With respect to achieving large bandwidthefficiency, the limiting factors and potentials of edge-coupled (waveguide, waveguide-fed, traveling-wave, periodic-travelingwave), resonant-cavity, and refracting-facet photodiodes, as well as the avalanche photodiode are discussed. Regarding high-saturation current, the author estimated how much the space-charge effect limits the saturation current and two ways to reduce the space-charge effect are outlined. One way is to distribute the photocarriers along the edge-coupled PD's and the other is to increase the carrier velocity using a uni-traveling carrier structure. The waveguide-photodiode-based technologies that we have developed are also presented; namely the design and fabrication of a 100-GHz waveguide photodiode (WGPD), uni-traveling carrier WGPD, 60-GHz packaging, and a 20-GHz large-core WGPD for the planar lightwave circuit integration. A 50-Gb/s receiver opto-electronic integrated circuit technology based on the WGPD is also presented.

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“…] where the count autocorrelations are defined as: x)], and the count cross correlation is defined by C z (t 1 , t 2 …”

Section: The Dead-space Multiplication Model (Dsmt)mentioning

confidence: 99%

Parallel bandwidth characteristics calculations for thin avalanche photodiodes on a SGI Origin 2000 supercomputer

Pan

Ierotheou

Hayat

2004

Concurrency and Computation

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SUMMARYAn important factor for high-speed optical communication is the availability of ultrafast and low-noise photodetectors. Among the semiconductor photodetectors that are commonly used in today's long-haul and metro-area fiber-optic systems, avalanche photodiodes (APDs) are often preferred over p-i-n photodiodes due to their internal gain, which significantly improves the receiver sensitivity and alleviates the need for optical pre-amplification. Unfortunately, the random nature of the very process of carrier impact ionization, which generates the gain, is inherently noisy and results in fluctuations not only in the gain but also in the time response. Recently, a theory characterizing the autocorrelation function of APDs has been developed by us which incorporates the dead-space effect, an effect that is very significant in thin, high-performance APDs. The research extends the time-domain analysis of the dead-space multiplication model to compute the autocorrelation function of the APD impulse response. However, the computation requires a large amount of memory space and is very time consuming. In this research, we describe our experiences in parallelizing the code in MPI and OpenMP using CAPTools. Several array partitioning schemes and scheduling policies are implemented and tested. Our results show that the code is scalable up to 64 processors on a SGI Origin 2000 machine and has small average errors.

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Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes

Cited by 64 publications

References 19 publications

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

Ultrawide-band/high-frequency photodetectors

Parallel bandwidth characteristics calculations for thin avalanche photodiodes on a SGI Origin 2000 supercomputer

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