Frequency response theory for multilayer photodiodes

Hollenhorst, J. N.

doi:10.1109/50.50759

Cited by 50 publications

(25 citation statements)

References 13 publications

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“…Regarding the transit time effects, the frequency response is calculated by combining the coefficients derived from a matrix formulation, following the analytical solution of the continuity equations in the drift and absorption regions [6]. The analytical solutions can be obtained only for constant drift carrier velocities, i.e., when the electric field is constant.…”

Section: Transit Time Effectsmentioning

confidence: 99%

Frequency response optimization of dual depletion InGaAs/InP PIN photodiodes

Pereira

Torres

2016

Photonic Sens

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Abstract:The frequency response of a dual depletion p-i-n (PIN) photodiode structure is investigated. It is assumed that the light is incident on the N side and the drift region is located between the N contact and the absorption region. The numerical model takes into account the transit time and the capacitive effects and is applied to photodiodes with non-uniform illumination and linear electric field profile. With an adequate choice of the device's structural parameters, dual depletion photodiodes can have larger bandwidths than the conventional PIN devices.

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Section: Transit Time Effectsmentioning

confidence: 99%

Frequency response optimization of dual depletion InGaAs/InP PIN photodiodes

Pereira

Torres

2016

Photonic Sens

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“…Using a similar local analysis [12], [13] concluded that a gain-bandwidth product of 228 GHz should be achievable using an APD with a 0.1 m bulk InAlAs multiplication layer [13]. However, at such small dimensions, the dead space becomes a significant fraction of the avalanche width.…”

Section: Introductionmentioning

confidence: 99%

Effect of dead space on avalanche speed [APDs]

Tan

et al. 2002

IEEE Trans. Electron Devices

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Abstract-The effects of dead space (the minimum distance travelled by a carrier before acquiring enough energy to impact ionize) on the current impulse response and bandwidth of an avalanche multiplication process are obtained from a numerical model that maintains a constant carrier velocity but allows for a random distribution of impact ionization path lengths. The results show that the main mechanism responsible for the increase in response time with dead space is the increase in the number of carrier groups, which qualitatively describes the length of multiplication chains. When the dead space is negligible, the bandwidth follows the behavior predicted by Emmons but decreases as dead space increases.

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“…This source of dark current can be suppressed by isolating the low-bandgap material in a dedicated absorption layer in which the electric field is moderated by an adjacent charge layer: the separate absorption, charge, and multiplication (SACM) design, as diagramed in Fig. 1 [7]. SACM APDs can also be modulated faster than homojunction APDs because photogeneration of carriers is confined to a single layer, which shortens the impulse response of the detector [7,8].…”

Section: Epitaxially-grown Sacm Apdsmentioning

confidence: 97%