1986
DOI: 10.1088/0305-4470/19/14/012
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Fringing fields in disc capacitors

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Cited by 78 publications
(55 citation statements)
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“…However this situation happens only at this point. It is easy to see that System (8) is stabilizing at this position with an input u = 0. By defining an open ball B e ¼ XjkXk\e f g& X of radius e centered at the origin, where X = (x 1 ,x 2 ,x 3 ) T and |Á| the usual Euclidean norm, a more practical control law can be expressed as…”
Section: Assumptionmentioning
confidence: 98%
See 1 more Smart Citation
“…However this situation happens only at this point. It is easy to see that System (8) is stabilizing at this position with an input u = 0. By defining an open ball B e ¼ XjkXk\e f g& X of radius e centered at the origin, where X = (x 1 ,x 2 ,x 3 ) T and |Á| the usual Euclidean norm, a more practical control law can be expressed as…”
Section: Assumptionmentioning
confidence: 98%
“…Assuming zero thicknesses for the plates, several approximate analytical formulae have been developed for the capacitance in the presence of the fringing field, such as Palmer [1] and Elliot [2] models. A number of other formulae have also been recommended assuming finite thicknesses for the electrodes [3][4][5][6][7][8].…”
Section: Introductionmentioning
confidence: 99%
“…Considering the effect of electric fringe field, the electric capacitance to the second order approximation of h/r for h/r < 1 can be expressed as 17 πε π …”
Section: Electrowetting Equationmentioning
confidence: 99%
“…Once the probability of electric distortion in internal electrodes reduces, the failing probability of capacitor electrodes decreases, then the electrical breakdown strength of capacitors is specifically improved. Figure 7 indicates capacitance fluctuations of the capacitors under the influence of different internal elec- Figure 6 Weibull plots of electrical breakdown strength for the capacitors using the 850℃ annealed glass-ceramics as dielectrics based on the internal electrode structure of (a) as to Figure 4 Figure 7(a)) in single layer structure seem to have the highest capacitances, because a flat capacitor influenced by the fringe field effects with electrode radius R and dielectric thickness d leads to a simple first-order approximation to actual capacitance C as [16] …”
Section: The Internal Electrodes For Hesdcsmentioning
confidence: 99%