Fröhlich resonance in the AsSb/AlGaAs system

Abstract

The optical absorption in a metal-semiconductor metamaterial based on the AlGaAs matrix has been investigated. The key feature of this material is the presence of random arrays of metallic AsSb nanoin clusions modifying its dielectric properties. It has been shown that the presence of such arrays in the material leads to resonance absorption of light by surface plasmons in AsSb nanoinclusions in the incident photon energy range from 1.37 to 1.77 eV. The experimental spectrum of the extinction coefficient at an energy of 1.48 eV exhibits a resonance peak with the half width equal to 0.18 eV. The extinction coefficient for AsSb nanoinclusions in the AlGaAs matrix has been calculated in terms of the Mie theory. The calculated spectrum of the extinction coefficient also includes a resonance peak with the energy and half width equal to 1.48 and 0.18 eV, respectively. The calculated plasma energy for free standing nanoinclusions in vacuum is 7.38 eV.

Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial

“…Since the light extinction based on the point defects is eliminated after the post-growth annealing, the absorption and scattering of light in the annealed samples can be caused by the self-organized system of As or AsSb nanoinclusions [ 6 , 7 , 8 , 10 , 11 , 12 , 13 ]. In the Sb-free LT MBE epilayers, the nanoinclusions are composed of arsenic atoms only.…”

“…The presence of the array of arsenic nanoparticles does not cause any substantial changes in the optical properties of the medium within the transparency window of the GaAs matrix in the near-infrared range [ 6 , 10 ]. However, in the case of LT MBE of GaAs 1− y Sb y and Al x Ga 1− x As 1− y Sb y ( x ≈ 0.3, y ≈ 0.03) solid solutions, a specific optical absorption was revealed, which was attributed to the system of the AsSb nanoinclusions [ 11 , 12 , 13 ]. The absorption coefficient increased with increasing photon energy till the edge of the band-to-band transitions.…”

Correlation between structural, optical, and electrical properties of self-assembled plasmonic nanostructures on the GaAs surface

“…After annealing, wellseparated silver nanoparticles are formed on the surface of gallium arsenide. Hence, physical vapor deposition may serve as an alternative way to obtain much demanded combination of semiconductor material with plasmonic metal nanoparticles (Ushanov et al 2014). The reflection difference spectra clearly demonstrate excitation of plasmon resonances localized in the silver nanoparticles formed on the gallium arsenide surface.…”

Plasmon-excitonic scattering of light from a nanoparticle located near a quantum well

“…Near the resonance (10) the polarizability (9) can be expressed as (11) with Ω α = ω p / . In a dielectric multilayer medium, the effective plasmonic polarizability χ (α) entering Eqs.…”

“…Obser vation of plasmons occurring in metal inclusions below the fundamental edge of bulk semiconductor, cf. [11], makes it urgent to analyze the optical effects related with coupling between excitons and plasmons of different symmetry.…”