Abstract:In this present work, different Cross-Coupled Differential Drive (CCDD) CMOS bridge rectifiers are designed using either 32 nm or Tunnel-FET (TFET) technology. Commercial PDK has been used for the 32 nm technology, while lookup tables (LUT) resulting from a physics model have been applied for the TFET. To consider the parasitic effects for the circuit performances, the 32 nm-based circuits have been laid out, while a parasitic model has been included in the TFET LUT for circuit implementation. In this work, th… Show more
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