2015 IEEE International Memory Workshop (IMW) 2015
DOI: 10.1109/imw.2015.7150286
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From Memory in our Brain to Emerging Resistive Memories in Neuromorphic Systems

Abstract: In this work, we will focus on the role that new nonvolatile resistive memory technologies (as OxRAM and CBRAM) can play in emerging fields of application, such as neuromorphic circuits, to save energy and increase performance. We will present large-scale energy efficient neuromorphic systems based on ReRAM as stochastic-binary synapses. Prototype applications such as complex visual-and auditory-pattern extraction will be discussed using feedforward spiking neural networks. A parallel will be drawn between the… Show more

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Cited by 10 publications
(5 citation statements)
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“…In addition to binary operation, analogue memory operations that can be used for artificial neural network hardware have been investigated energetically in recent years. [14][15][16][17] Application of a voltage to a ReRAM device, where the ReRAM material is sandwiched between two electrodes to form a simple capacitor structure, causes the device resistance to switch between the high resistance state (HRS) and the low resistance state (LRS) (and intermediate states in some cases). This switching process can be used for the memory operation.…”
mentioning
confidence: 99%
“…In addition to binary operation, analogue memory operations that can be used for artificial neural network hardware have been investigated energetically in recent years. [14][15][16][17] Application of a voltage to a ReRAM device, where the ReRAM material is sandwiched between two electrodes to form a simple capacitor structure, causes the device resistance to switch between the high resistance state (HRS) and the low resistance state (LRS) (and intermediate states in some cases). This switching process can be used for the memory operation.…”
mentioning
confidence: 99%
“…As a result, the atomic switch's behaviour can be controlled by the material choice, which is likely to vary on the application. CBRAM has been implemented using GeS₂/Ag [44][45][46][47][48][49][50], HfO₂/GeS₂ [51], Cu/Ti/Al₂O₃ [52], Ag/Ge₀.₃Se₀.₇ [53][54][55], Ag₂S [56][57][58] and Cu/SiO₂ [54]. Similar to atomic switches, the material chosen affects the stability and dependability of the device as well as the switching behaviour of CBRAM devices, Memristors can be used in a wide number of ways.…”
Section: Materials and Devicesmentioning
confidence: 99%
“…As such, the selection of the appropriate material can govern how the atomic switch will behave and will likely be application-dependent. CBRAM has been implemented using GeS 2 /Ag [299], [457], [1027], [1384], [1439], [2066], [2068], HfO 2 /GeS 2 [2067], Cu/Ti/Al 2 O 3 [2070], Ag/Ge 0.3 Se 0.7 [1408], [2069], [2198], Ag 2 S [2199]- [2201] and Cu/SiO 2 [2069]. Similar to atomic switches, the switching behavior of CBRAM devices is also dependent upon the material selected; the stability and reliability of the device is also dependent upon the material chosen.…”
Section: Materials For Neuromorphic Systemsmentioning
confidence: 99%