This research uses the SCAPS-1D simulation program to methodically enhance and numerically analyze perovskite solar cells that utilize a gallium oxide (Ga 2 O 3 ) holeblocking layer. To corroborate our calculations, we initially compared the current density−voltage properties (J−V) obtained from our SCAPS model to experimental results. Remarkably, the curve exhibited almost excellent alignment, exhibiting the precision and reliability of our analytical approach. We simulated a typical (n-i-p) architecture and carefully investigated the performance of various parameters for the electron transport layer and perovskite. We optimized the thicknesses of the perovskite and Ga 2 O 3 , doping concentration of Ga 2 O 3 , perovskite defect density, interfacetrapped defects, series resistance, and shunt resistance. Through calculation, we successfully developed an efficient perovskite photovoltaic with the structure of FTO/Ga 2 O 3 /MAPbI 3 /spiro-OMeTAD/Au, yielding a champion performance of 28.19%. This modeling is beneficial for understanding the operational principles of MAPbI 3 photovoltaics. It also plays a crucial role in directing the fabrication of high-performance devices under laboratory conditions.