DOI: 10.3990/1.9789036548250
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From radical-enhanced to pure thermal ALD of gallium and aluminium nitrides

Abstract: Contents xi 6.3 High-pressure (HP) ALD………………………………………………….… 6.3.1 Dependence of incubation time on surface termination…………...… 6.3.2 Control experiments showing the role of-NH terminations and the effect of plasma………………………………………………….…… 6.4 Investigation into the growth on Si and AlN substrates by in-situ SE…….… 6.4.1 The incubation stage……………………………………………….… 6.4.2 The stage of increasing step height…………………………...……… 6.4.3 The stage of stable step height……………………………………..… 6.5 Towards thermal ASALD of GaN…………………………… Show more

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Cited by 3 publications
(10 citation statements)
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“…The layer was found to be N-rich with negligible carbon and about 7% oxygen inside the film. In comparison, T-GaN film is Ga rich with an average composition estimated as Ga 0.53 N 0.39 C 0.01 O 0.07 [223]. Both films confirm to polycrystalline wurzitic structure.…”
Section: Introductionmentioning
confidence: 89%
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“…The layer was found to be N-rich with negligible carbon and about 7% oxygen inside the film. In comparison, T-GaN film is Ga rich with an average composition estimated as Ga 0.53 N 0.39 C 0.01 O 0.07 [223]. Both films confirm to polycrystalline wurzitic structure.…”
Section: Introductionmentioning
confidence: 89%
“…All polycrystalline GaN samples studied in this chapter were of 36 ± 3 nm thickness. For comprehensive account of poly-GaN thin film ALD process, please refer to [223].…”
Section: Methodsmentioning
confidence: 99%
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