From Si nanotubes to nanowires: Synthesis, characterization, and self-assembly

Qiu, Teng; Wu, Xingxin; Mei, Yongfeng; Wan, Guo Jiang; Chu, Paul K.; Siu, G. G.

doi:10.1016/j.jcrysgro.2005.01.095

Cited by 77 publications

(64 citation statements)

References 33 publications

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“…The progress from silicon nanotubes to nanowires has been achieved at 50 C for 60 m in the presence of HF and AgNO 3 solution [162]. The formation of intermediate Si nanostructures (undetached Si nanotubes) is suggested to be responsible for the growth of triangular shaped silicon nanowires.…”

Section: Hydrothermal Preparation Of Nanotubesmentioning

confidence: 99%

Hydrothermal technology for nanotechnology

Byrappa

Adschiri

2007

Progress in Crystal Growth and Characterization of Materials

912

442

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Section: Hydrothermal Preparation Of Nanotubesmentioning

confidence: 99%

Hydrothermal technology for nanotechnology

Byrappa

Adschiri

2007

Progress in Crystal Growth and Characterization of Materials

912

442

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“…There is another school of thought which believes that Ag protects silicon from being etched away. [24] The controversy about the etching mechanism originates from the ambiguous detection of the initial position of the Ag particles, because of the possibility that Ag particles can fall into the etching holes during or after the etching process. This mechanism cannot be excluded, although SEM images indicate that the Ag particles are located at the etching holes.…”

mentioning

confidence: 99%

Fabrication of Silicon Nanowire Arrays with Controlled Diameter, Length, and Density

2007

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Semiconductor nanowires are promising candidates for future applications in electronics and photonics. Silicon nanowires are attracting much attention due to their technical compatibility with existing semiconductor technology. [1,2] Silicon nanowires have been successfully incorporated in field effect transistors, [3] chemical sensors, [4] and field emitters.[5]However, for device applications, one important challenge that needs to be overcome is obtaining precise control of the size, crystallographic orientation, location, and packing manner of the nanowires. Much research effort has been devoted to the fabrication and applications of silicon nanowires. Usually, silicon nanowires are grown with random orientations and further processing is required to assemble the nanowires for specific applications. [6][7][8][9] Recently, the orientationcontrolled growth of silicon nanowire arrays, [10,11] and the controlled growth of silicon nanowires in predetermined configurations [12] has been illustrated. Here, we show that large-area silicon nanowire arrays with controlled size, orientation, and packing density can be fabricated with a high throughput by a convenient method. While catalytic etching has been successfully developed as a method to fabricate silicon nanowires with uniform crystallographic orientation, this process still does not allow reliable control over the location and size of the nanowires. [13][14][15] By combining catalytic etching with the widely used nanosphere lithography method, [16,17] we have fabricated large-scale SiGe quantum dot arrays with a controlled diameter, height, and density.[18] Here, we show the large-scale fabrication of silicon nanowire arrays, which have many different applications, including as field emitters, [5] photonic crystals, [19] and vertical field effect transistors. [20] The diameter, height of individual nanowires, and the center-to-center distance between nanowires have been accurately controlled.The overall fabrication process is schematically depicted in Figure 1. First, the template, consisting of a monolayer of polystyrene (PS) spheres, is allowed to self-assemble on a Si substrate. Subsequently, a reactive ion etching (RIE) process is used to reduce the diameter of the PS spheres, which leads to the formation of colloidal particle arrays that are no longer close-packed. In the next step, a silver film is thermally evaporated onto the silicon substrate as a catalyst. Owing to the PS monolayer mask, a Ag film with a hexagonal array of holes is formed. The diameters of the holes match that of the diameter-reduced PS spheres. Subsequently, an etching step is conducted in a mixture of deionized water, HF, and H 2 O 2 . The Ag film catalyzes the etching of silicon beneath it. During the etching process, the "walls" of the honeycomb are gradually etched away and the remnant silicon forms a nanowire array. Finally, the PS spheres are removed by dissolution in CHCl 3 , and the Ag film is dissolved in boiling aqua regia. Figure 2 shows scanning electron microscopy (SEM) ...

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“…The band structure calculation results show that single-walled carbon nanotubes have a conductor and semiconductor properties, which has been confirmed by experiment [7][8][9][10]. Part of single-walled silicon nanotubes were studied by using first-principles method and molecular dynamics method [11][12][13][14][15]. Effect of doping on the structural and electronic properties of silicon nanotubes were also studied [16][17][18][19].Seifert et al studied the electronic properties of the periodic structure of si-based nanotubes,the results showed the Si-based nanotubes have a semiconducting gap, which in contrast to carbon nanotubes is largely independent of the tube diameter and chirality [20].…”

Section: Introductionmentioning

confidence: 83%

Effects of Modeling Method on Prediction of Electronic Properties of Carbon Nantobues and Silicon Nanotubes

Xu¹,

Jiang²,

Fu³

et al. 2015

Proceedings of the 2015 International Power, Electronics and Materials Engineering Conference

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Abstract. Based on the density functional theory (DFT), we predict electronic properties of the non-periodic structure and the periodic structure of carbon nanotubes (CNTs) and silicon nanotubes (SiNTs). In the simulation process, we studied how to increase the length of nanotubes or add H atoms to dangling bond to describe the feasibility of the non-periodic structure. The results show that, for the non-periodic structure of CNTs, compared with only increasing the length of the nanotubes, the simulation result of adding H atoms to dangling bond is better. For the non-periodic structure of SiNTs, the simulation result of increasing the length is more reasonable.

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From Si nanotubes to nanowires: Synthesis, characterization, and self-assembly

Cited by 77 publications

References 33 publications

Hydrothermal technology for nanotechnology

Hydrothermal technology for nanotechnology

Fabrication of Silicon Nanowire Arrays with Controlled Diameter, Length, and Density

Effects of Modeling Method on Prediction of Electronic Properties of Carbon Nantobues and Silicon Nanotubes

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