From silicon to printed electronics: A coherent modeling and design flow approach based on printed electrolyte gated FETs

Marques, Gabriel Cadilha; Rasheed, Farhan; Aghassi‐Hagmann, Jasmin; Tahoori, Mehdi B.

doi:10.1109/aspdac.2018.8297397

Cited by 17 publications

(7 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1b. EGTs operate at low voltages (≤2.0 V) and show circuit performances ranging from several hundreds of Hz until kHz [57][58][59][60] . Studies on EGT variations and device variation modeling have also been studied prior to this work 61,62 .…”

Section: Resultsmentioning

confidence: 99%

Hybrid low-voltage physical unclonable function based on inkjet-printed metal-oxide transistors

et al. 2020

Self Cite

View full text Add to dashboard Cite

Modern society is striving for digital connectivity that demands information security. As an emerging technology, printed electronics is a key enabler for novel device types with free form factors, customizability, and the potential for large-area fabrication while being seamlessly integrated into our everyday environment. At present, information security is mainly based on software algorithms that use pseudo random numbers. In this regard, hardware-intrinsic security primitives, such as physical unclonable functions, are very promising to provide inherent security features comparable to biometrical data. Device-specific, random intrinsic variations are exploited to generate unique secure identifiers. Here, we introduce a hybrid physical unclonable function, combining silicon and printed electronics technologies, based on metal oxide thin film devices. Our system exploits the inherent randomness of printed materials due to surface roughness, film morphology and the resulting electrical characteristics. The security primitive provides high intrinsic variation, is non-volatile, scalable and exhibits nearly ideal uniqueness.

show abstract

Section: Resultsmentioning

confidence: 99%

Hybrid low-voltage physical unclonable function based on inkjet-printed metal-oxide transistors

et al. 2020

Self Cite

View full text Add to dashboard Cite

show abstract

“…Gravure printing is among the most relevant technologies for the production of flexible and low-cost printed electronics, due to its high-speed, high-throughput, high-resolution deposition of functional materials and compatibility with roll-to-roll processes [42][43][44]. As depicted in Figure 3a, the technique relies on the transfer of ink from small engraved cells in the gravure cylinder to the flexible substrate in three steps: (1) filling (cavities are overfilled with ink by ink bath or chambered doctor blade); (2) wiping (removal of excess ink from the non-image areas using doctor blade); (3) transferring (the moving substrate contacts the free surface of the ink in the well, and ink is pulled from the well onto the substrate). The quality of the printing is governed by the wettability of the ink to the printing plate, doctor blade, and substrate [45].…”

Section: Gravure Printingmentioning

confidence: 99%

“…The manufacturing strategies for conventional silicon-based technologies are based on photolithographic and chemical processing steps, allowing for the realization of electronic circuits on wafers made of pure semiconducting material. Albeit well-established, these methods suffer from lack of flexibility, high costs, and a limited range of materials that can be processed [1]. In this regard, the employment of printing technologies constitutes an important alternative, due to the ease of fabrication, design flexibility, compatibility with flexible substrates, and excellent control of electrical, optical, and magnetic properties of the printed materials.…”

Section: Introductionmentioning

confidence: 99%

Printing ZnO Inks: From Principles to Devices

et al. 2020

View full text Add to dashboard Cite

Solution-based printing approaches permit digital designs to be converted into physical objects by depositing materials in a layer-by-layer additive fashion from microscale to nanoscale resolution. The extraordinary adaptability of this technology to different inks and substrates has received substantial interest in the recent literature. In such a context, this review specifically focuses on the realization of inks for the deposition of ZnO, a well-known wide bandgap semiconductor inorganic material showing an impressive number of applications in electronic, optoelectronic, and piezoelectric devices. Herein, we present an updated review of the latest advancements on the ink formulations and printing techniques for ZnO-based nanocrystalline inks, as well as of the major applications which have been demonstrated. The most relevant ink-processing conditions so far explored will be correlated with the resulting film morphologies, showing the possibility to tune the ZnO ink composition to achieve facile, versatile, and scalable fabrication of devices of different natures.

show abstract

“…The later discussed circuit properties can be deduced on the basis of the transistor properties. [16,[41][42][43] To achieve high performance EGFETs, the indium oxide films need to be annealed at temperatures around 400 °C. In the past, it has been shown that these EGFETs perform reliably over a wide temperature range.…”

Section: Electrolyte-gated Field-effect Transistors Based On Indium Omentioning

confidence: 99%

“…[40] The EGFETs were also successfully modeled and integrated into a process design kit (PDK), which supports the circuit design flow. [16,[41][42][43] To achieve high performance EGFETs, the indium oxide films need to be annealed at temperatures around 400 °C. [44] By using chemical or photonic curing methods, the indium oxide film can be cured also at room temperatures.…”

Section: Electrolyte-gated Field-effect Transistors Based On Indium Omentioning

confidence: 99%

Progress Report on “From Printed Electrolyte‐Gated Metal‐Oxide Devices to Circuits”

et al. 2019

View full text Add to dashboard Cite

Printed electrolyte‐gated oxide electronics is an emerging electronic technology in the low voltage regime (≤1 V). Whereas in the past mainly dielectrics have been used for gating the transistors, many recent approaches employ the advantages of solution processable, solid polymer electrolytes, or ion gels that provide high gate capacitances produced by a Helmholtz double layer, allowing for low‐voltage operation. Herein, with special focus on work performed at KIT recent advances in building electronic circuits based on indium oxide, n‐type electrolyte‐gated field‐effect transistors (EGFETs) are reviewed. When integrated into ring oscillator circuits a digital performance ranging from 250 Hz at 1 V up to 1 kHz is achieved. Sequential circuits such as memory cells are also demonstrated. More complex circuits are feasible but remain challenging also because of the high variability of the printed devices. However, the device inherent variability can be even exploited in security circuits such as physically unclonable functions (PUFs), which output a reliable and unique, device specific, digital response signal. As an overall advantage of the technology all the presented circuits can operate at very low supply voltages (0.6 V), which is crucial for low‐power printed electronics applications.

show abstract

From silicon to printed electronics: A coherent modeling and design flow approach based on printed electrolyte gated FETs

Cited by 17 publications

References 37 publications

Hybrid low-voltage physical unclonable function based on inkjet-printed metal-oxide transistors

Hybrid low-voltage physical unclonable function based on inkjet-printed metal-oxide transistors

Printing ZnO Inks: From Principles to Devices

Progress Report on “From Printed Electrolyte‐Gated Metal‐Oxide Devices to Circuits”

Contact Info

Product

Resources

About