From stannous oxide to stannic oxide epitaxial films grown by pulsed laser deposition with a metal tin target

Li, Mingkai; Zheng, Lilan; Zhang, Mi; Lin, Yi‐Cheng; Li, Lei; Lu, Yinmei; Chang, Gang; Klar, Peter J.; He, Yunbin

doi:10.1016/j.apsusc.2018.10.043

Cited by 8 publications

(3 citation statements)

References 40 publications

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“…Tin exhibits active Raman modes for wavenumbers below 300 cm −1 in both its bulk and two-dimensional forms [38][39][40]. Raman characterization of the tin nanosheets, in the 100-400 cm −1 spectral range, revealed no peaks associated with tin as already observed for the case without graphene because of the low Raman scattering cross-section of tin in this nanoscale regime [17].…”

Section: Resultsmentioning

confidence: 67%

Optical properties of two-dimensional tin nanosheets epitaxially grown on graphene

Bonaventura,

Martella,

Macis

et al. 2024

Nanotechnology

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Heterostacks formed by combining two-dimensional materials show novel properties which are of great interest for new applications in electronics, photonics and even twistronics, the new emerging field born after the outstanding discoveries on twisted graphene. Here, we report the direct growth of tin nanosheets at the two-dimensional limit via molecular beam epitaxy on chemical vapor deposited graphene on Al2O3(0001). The mutual interaction between the tin nanosheets and graphene is evidenced by structural and chemical investigations. On the one hand, Raman spectroscopy indicates that graphene undergoes compressive strain after the tin growth, while no charge transfer is observed. On the other hand, chemical analysis shows that tin nanosheets interaction with sapphire is mediated by graphene avoiding the tin oxidation occurring in the direct growth on this substrate. Remarkably, optical measurements show that the absorption of tin nanosheets exhibits a graphene-like behavior with a strong absorption in the ultraviolet photon energy range, therein resulting in a different optical response compared to tin nanosheets on bare sapphire. The optical properties of tin nanosheets therefore represent an open and flexible playground for the absorption of light in a broad range of the electromagnetic spectrum and technologically relevant applications for photon harvesting and sensors.

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Section: Resultsmentioning

confidence: 67%

Optical properties of two-dimensional tin nanosheets epitaxially grown on graphene

Bonaventura,

Martella,

Macis

et al. 2024

Nanotechnology

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“…Common challenges for the growth of phase-pure SnO are its metastability with respect to the disproportionation into SnO 2 and Sn, as well as the adjustment of the stoichiometry to prevent the formation of secondary SnO 2 or Sn phases. Note that despite the non-equilibrium nature of thin film growth, equilibrium phase diagrams can provide guidance as discussed next: Firstly, the stability region of SnO at temperatures between 197 and 410 • C (and disproportionation outside this region) rationalizes why most SnO films have been obtained at growth or annealing temperatures in this temperature range; [7][8][9]12,17,20 secondly, during growth by reactive sputtering 9,13 , PLD, 10,18 or MBE 19 the formation of secondary SnO 2 or Sn-phases has been controlled by adjusting the stoichiometry of the source vapor, i.e., the oxygen (background) pressure at fixed flux of SnO x from the source, in qualitative agreement with the equilibrium stoichiometry dependence in the phase diagram. The blue or orange shaded regions as well as colored arrows in Fig.…”

Section: Thermodynamics Of the Growth Windowmentioning

confidence: 99%

“…10 The observed p-type conductivity of unintentionally doped (UID) SnO has been correlated by first-principle calculations with Sn vacancies 14 or their complexes with hydrogen 15 acting as shallow acceptors, whereas oxygen interstitials were predicted to be electrically inactive. 14,15 SnO thin films have been grown by various methods, such as electron-beam evaporation 16 or reactive DC magnetron sputtering, 13 both followed by thermal annealing, reactive ion beam sputter deposition, 9 pulsed laser deposition (PLD) from an oxide target 10,12,17 or a metallic Sn target 18 , and molecular beam epitaxy (MBE). 8,19,20 The largest challenge for the growth of phase pure SnO is its metastability with respect to its stable relatives Sn and SnO 2 .…”

Section: Introductionmentioning

confidence: 99%

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

Budde

Mazzolini

Feldl

et al. 2020

Phys. Rev. Materials

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Transparent conducting or semiconducting oxides are an important class of materials for (transparent) optoelectronic applications and -by virtue of their wide band gaps -for power electronics. While most of these oxides can be doped n-type only with room-temperature electron mobilities on the order of 100 cm 2 /Vs, p-type oxides are needed for the realization of pn-junction devices but typically suffer from exessively low (< <1 cm 2 /Vs) hole mobilities. Tin monoxide (SnO) is one of the few p-type oxides with a higher hole mobility yet is currently lacking a well-established understanding of its hole transport properties. Moreover, growth of SnO is complicated by its metastability with respect to SnO 2 and Sn, requiring epitaxy for the realization of single crystalline material typically required for high-end applications. Here, we give a comprehensive account on the epitaxial growth of SnO, its (meta)stability, and its thermoelectric transport properties in the context of the present literature. Textured and single-crystalline, unintentionally-doped p-type SnO(001) films are grown on Al 2 O 3 (00.1) and Y 2 O 3 -stabilized ZrO 2 (001), respectively, by plasma-assisted molecular beam epitaxy and the epitaxial relations are determined. The metastability of this semiconducting oxide is addressed theoretically through an equilibrium phase diagram. Experimentally, the related SnO growth window is rapidly determined by an in-situ growth kinetics study as function of Sn-to-O-plasma flux ratio and growth temperature. The presence of secondary Sn and SnO x (1 < x ≤ 2) phases is comprehensively studied by x-ray diffraction, Raman spectroscopy, scanning electron microscopy, and x-ray photoelectron spectroscopy, indicating the presence of Sn 3 O 4 or Sn as major secondary phases, as well as a fully oxidized SnO 2 film surface. The hole transport properties, Seebeck coefficient, and density-of-states effective mass are determined and critically discussed in the context of the present literature on SnO, considering its strongly anisotropic effective hole mass: Hall measurements of our films reveal room temperature hole concentrations and mobilities in the range of 2•10 18 to 10 19 cm −3 and 1.0 to 6.0 cm 2 /Vs, respectively, with consistently higher mobility in the single-crystalline films. Temperature-dependent Hall measurements of the single-crystalline films closest to stoichiometric, phase-pure SnO indicate non-degenerate band transport by free holes (rather than hopping transport) with dominant polar optical phonon scattering at room temperature. Taking into account the impact of acceptor band formation and the apparent activation of the hole concentration by 40-53 meV, we assign tin vacancies rather than their complexes with hydrogen as the unintentional acceptor. The room temperature Seebeck coefficient in our films confirms p-type conductivity by band transport. Its combination with the hole concentration allows us to experimentally estimate the density of states effective hole mass to be in the range of 1 to 8 times ...

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Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors

Ruan

Liu

Chen

et al. 2019

Adv Elect Materials

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In this study, indium gallium zinc oxide (InGaZnO [IGZO]) active layer capped with an ultrathin p‐type stannous oxide (SnO) is demonstrated to be a thin film transistor (TFT) for color scanning and photosensing device applications. Typically, the sole IGZO‐based TFT is blind to visible light and hard to be developed for visible light sensing. The combination of IGZO and SnO layers can extend the light detection spectrum into visible light wavelengths and ameliorate the photosensing characteristics. The optical responsivity and signal to noise ratio can even be enhanced from 1.05 × 10−2 to 398.02 A W−1 and from 2.1 × 101 to 6.8 × 105 with at least four orders of magnitude, respectively. With the detailed material analysis and physical model discussed, it suggests that the large amount of additional light‐excited carrier generated in the capping layer is the key factor for the significant improvement. Furthermore, the phenomenon of persistent photoconductivity can be effectively suppressed by its natural recombination under the heterojunction structure without applying charge‐pumping method. The electrical uniformity of the sensor device is also highly potential for the next‐generation displays integrating the photosensing functions.

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From stannous oxide to stannic oxide epitaxial films grown by pulsed laser deposition with a metal tin target

Cited by 8 publications

References 40 publications

Optical properties of two-dimensional tin nanosheets epitaxially grown on graphene

Optical properties of two-dimensional tin nanosheets epitaxially grown on graphene

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors

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