“…A low-conductance single-electron transistor (SET) can be defined as its dimensionless parallel conductance, g < 1, where g = (G S + G D )/G K , where G S and G D are the high-temperature conductance of tunneling junctions connected with source and drain electrodes, as depicted in figure 1(a), and the quantum conductance G K = e 2 /h. By applying Green's non-equilibrium function approach [5][6][7], the CBPD for a lowconductance SET was calculated [4] and referred to as a weak coupling regime [8][9][10]. Utilizing the proposed method, one can determine the optimum temperature to operate a low-conductance SET for various applications, such as single-electron memory [11][12][13] and quantum dots [14], which trap and manipulate individual electrons, allowing researchers to explore quantum phenomena.…”