“…60,61 Currently, MAS DNP experiments on semiconductor NCs are performed by using inert support material, such as mesoporous silica, gels, or hexagonal boron nitride (h-BN), to disperse the NCs or minimize the size of the NC aggregates and maintain the proximity between the NC and the DNP polarizing agents after freezing the sample. 56,57,59,62,63 In this way, DNP enables many solid-state NMR experiments on semiconductor NCs such as HETCOR experiments with challenging natural isotopic abundance combinations ( 13 C-111 Cd, 13 C- 29 Si, and 31 P-113 Cd), 113 Cd anisotropic chemical shift -isotropic chemical shift correlations ( 113 Cd-113 Cd), and through-bond and through-space homonuclear double-quantum singlequantum (DQ-SQ) correlation experiments ( 29 Si, 31 P or 113 Cd). 56,57,59,62 Notably, DNPenhanced surface-selective 111 Cd and 113 Cd SSNMR experiments have been performed on carboxylate capped CdS or CdSe NCs.…”