FTGMOS: A novel feedback thermal gradient MOS circuit model

Abstract

A novel hardware implementable model for MOS devices in an integrated circuit is proposed that negates the thermal effects. It applies a correction to the device whose magnitude varies in accordance with the amount of error introduced in the device due to thermal gradient. This model introduces corrections by a suitable circuit external to the device. The FTGMOS model can he applied to all the devices in an integrated circuit to obtain the circuit performance as if thermal effects are absent altogether.