FTIR and Raman study of rapid thermal annealing and oxidation effects on structural properties of silicon-rich Si x C 1-x thin films deposited by R.F co-sputtering

Khalfi, A. El; Ech‐chamikh, E.; Ijdiyaou, Y.; Azizan, M.; Essafti, A.; Nkhaili, L.; Kissani, A. El; Tomasella, Éric

doi:10.1016/j.vibspec.2016.12.004

Cited by 7 publications

(5 citation statements)

References 28 publications

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“…This fact suggests that other components are present on the catalyst surface. It has been reported in the literature that in this region, Si-O-Si and Mg-O stretching modes could appear [27][28]. Therefore, this could be a confirmation of our chemical interaction hypothesis: when the monolithic catalyst remains at high temperature (800°C) under reaction conditions for some time, the migration of cordierite components from the structure to the catalyst film starts to be relevant.…”

Section: Laser Raman Spectroscopy Resultssupporting

confidence: 87%

Oxidative coupling of methane on cordierite monoliths coated with Sr/La2O3 catalysts. Influence of honeycomb structure and catalyst-cordierite chemical interactions on the catalytic behavior

Sollier

Gómez

Boix

et al. 2018

Applied Catalysis A: General

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Section: Laser Raman Spectroscopy Resultssupporting

confidence: 87%

Oxidative coupling of methane on cordierite monoliths coated with Sr/La2O3 catalysts. Influence of honeycomb structure and catalyst-cordierite chemical interactions on the catalytic behavior

Sollier

Gómez

Boix

et al. 2018

Applied Catalysis A: General

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“…The last band centered around 1440 cm −1 is due to the C-C bonds. [14,27] Comparing the Raman spectra shown in Figs. 3(a…”

Section: Raman Characterizationmentioning

confidence: 99%

“…The spectra show two main overlapping peaks centered around 800 cm −1 and 1080 cm −1 , which are assigned to the stretching vibration mode of Si-C and Si-O bonds, respectively. [23,27] A little peak centered around 456 cm −1 is assigned to the rocking mode of Si-O bonds. [23,27] It is known that a SiC film is oxidized when the absorption peak of Si-O bonds appears in its FT-IR absorption spectrum.…”

Section: Ft-ir Characterizationmentioning

confidence: 99%

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Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films

Wang¹,

Lü²,

Zhang³

et al. 2022

Chinese Phys. B

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Stoichiometric and silicon-rich (Si-rich) SiC films were deposited by Microwave Electron Cyclotron Resonance (MW-ECR) plasma enhanced RF magnetron sputtering method. As-deposited films were oxidized at 800, 900 and 1000 ℃ in air for 60 min. The chemical composition and structure of the films were analyzed by X-ray Photoelectron Spectroscopy (XPS), Raman spectroscopy and Fourier Transform Infrared spectroscopy (FT-IR). The surface morphology of the films before and after high temperature oxidation was measured by atomic force microscopy. The mechanical property of the films was measured by a Nano-indenter. The anti-oxidation temperature of the Si-rich SiC film is 100 ℃ higher than that of the stoichiometric SiC film. The oxidation layer thickness of the Si-rich SiC film is thinner than that of the stoichiometric SiC film in depth direction. The large amount of extra silicon in the Si-rich SiC film plays an important role in the improvement of its high temperature anti-oxidation property.

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“…The broad peak appearing at 631.46 cm −1 is due to the Si-H stretching vibration assigned to the substrate band (corresponding to silicon) [29] . The presence of O-H and Si-H bonds shows that the films are a little polluted by hydrogen, which may be the result of the water vapor absorbed during exposure to air (a few days) before analysis [30] .…”

Section: Spectroscopy Ft-ir Analysismentioning

confidence: 99%

Effect of RF power on the structural and optical properties of ZnS thin films prepared by RF-sputtering

et al. 2018

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Zinc sulphide (ZnS) thin films have grown on glass and Si substrates by reactive cathodic radio frequency (RF) sputtering. The RF power was varied in the range of 100 to 250 W, while the deposition time is set at 75 min. The optical, structural, and morphological properties of these thin films have been studied. The optical properties (mainly thickness, refractive index, absorption coefficient, and optical band gap) were investigated by optical transmittance measurements in the wavelength range of ultraviolet-visible-near infrared spectroscopy and spectroscopy infrared with Fourier transform. Fourier (FT-IR) and XRD analysis indicated that all sputtering ZnS films had a single-phase with a preferred orientation along the (111) plane of the zinc sphalerite phase (ZB). The crystallite size ranged from 11.5 to 48.5 nm with RF power getting a maximum of 200 W. UV–visible measurements exhibited that the ZnS film had more than 80% transmission in the visible wavelength region. In addition, it has been observed that the band gap energy of ZnS films is decreased slightly from 3.52 to 3.29 eV, and as the RF power is increased, the film thickness increases with the speed of deposit growth. Scanning electron microscopy observations revealed the types of smooth-surfaced films. The measurements (FT-IR) revealed at wave number 1118 and 465.02 cm−1 absorption bands corresponding to the symmetrical and asymmetric vibration of the Zn–S stretching mode. X-ray reflectometry measurements of ZnS films have shown that the density of the films is (3.9 g/cm3) close to that of solid ZnS.

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FTIR and Raman study of rapid thermal annealing and oxidation effects on structural properties of silicon-rich Si x C 1-x thin films deposited by R.F co-sputtering

Cited by 7 publications

References 28 publications

Oxidative coupling of methane on cordierite monoliths coated with Sr/La2O3 catalysts. Influence of honeycomb structure and catalyst-cordierite chemical interactions on the catalytic behavior

Oxidative coupling of methane on cordierite monoliths coated with Sr/La2O3 catalysts. Influence of honeycomb structure and catalyst-cordierite chemical interactions on the catalytic behavior

Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films

Effect of RF power on the structural and optical properties of ZnS thin films prepared by RF-sputtering

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