FTIR exhaust gas analysis of GaN pseudo-halide vapor phase growth

An innovative GC-MS, NMR and ESR combined, gas-phase investigation during chemical vapor deposition of silicon oxynitrides films from tris(dimethylsilyl)amine

“…Gas phase analysis methods implemented in CVD processes is a common, though not trivial tool to access the deposition mechanisms. For example, in situ UV spectroscopic or FTIR exhaust gas studies have been used to establish chemical reactions paths in the CVD of gallium nitride (GaN) films, 21,22 and gas chromatography coupled with mass-spectrometry (GC-MS) was applied to investigate the thermal decomposition and by-products generation in CVD of titanium nitride (TiN) films. 23 More recent implementations involve in situ Raman spectroscopy during thermal decomposition of a tungsten imido complex by aerosol-assisted (AA)CVD, 24 or in situ optical emission spectroscopy during microwave plasma-enhanced chemical vapor deposition of phosphorus (P) and nitrogen (N) co-doped nanocrystalline diamond.…”

Carbon doped GaN layers grown by Pseudo‐Halide Vapour Phase Epitaxy

“…A key component of the setup was the gas cell in the exhaust gas line, to analyse the waste gas composition by in‐situ Fourier Transform Infrared (FTIR) spectroscopy. Details of the growth cell and the waste gas spectra can be found elsewhere . Earlier thermodynamic studies laid the foundation for the concept of GaN growth by PHVPE.…”

“…However, instead of Cl the pseudo halogen CN − ion is used as chemical Ga transport agent . A home‐made small quartz reactor for the Pseudo‐Halide Vapour Phase Epitaxy (PHVPE) is utilized to study controlled C doping at the reaction of GaCN with ammonia to GaN …”