Full 3D Simulation of the New Closed Shell-Electrode Detector

Feng, Mingfu; Li, Zheng; Liu, Manwen; Tang, Lipeng

doi:10.1051/matecconf/201710809003

Cited by 5 publications

(3 citation statements)

References 13 publications

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“…The leakage current of the detector increases rapidly after the bias voltage reaches 261 V, and then the detector is broken down. The breakdown voltage of our new detector if much higher than the 174 V value of the 3D-Trench detector [ 41 ]. The breakdown voltage is two orders of magnitude larger than the detector full depletion voltage and the detector leakage current after full depletion remains stable before breakdown.…”

Section: Electrical Characteristic Resultsmentioning

confidence: 99%

Design and Simulated Electrical Properties of a Proposed Implanted-Epi Silicon 3D-Spherical Electrode Detector

Cai

et al. 2023

Micromachines

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A new type of 3D electrode detector, named here as the Implanted-Epi Silicon 3D-Spherical Electrode Detector, is proposed in this work. Epitaxial and ion implantation processes can be used in this new detector, allowing bowl-shaped electrodes to penetrate the silicon completely. The distance between the bowl cathode and the central collection electrode is basically the same, thus the total depletion voltage of Implanted-Epi Silicon 3D-Spherical Electrode Detectors is no longer directively correlated with the thickness of the silicon wafer, but only related to the electrode spacing. In this work, we model the device physics of this new structure and use a simulation program to conduct a systematic 3D simulation of its electrical characteristics, including electric potential and electric field distributions, electron concentration profile, leakage current, and capacitance, and compare it to the traditional 3D detectors. The theoretical and simulation study found that the internal electric potential of the new detector was smooth and no potential saddle point was found. The electric field is also uniform, and there is no zero field and a low electric field area. Compared with the traditional silicon 3D electrode detectors, the full depletion voltage is greatly reduced and the charge collection efficiency is improved. As a large electrode spacing (up to 500 μm) can be realized in the Implanted-Epi Silicon 3D-Spherical Electrode Detector thanks to their advantage of a greatly reduced full depletion voltage, detectors with large pixel cells (and thus small dead volume) can be developed for applications in photon science (X-ray, among others).

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Section: Electrical Characteristic Resultsmentioning

confidence: 99%

Design and Simulated Electrical Properties of a Proposed Implanted-Epi Silicon 3D-Spherical Electrode Detector

Cai

et al. 2023

Micromachines

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“…For the improvement of electric field distribution and charge collection, a novel 3D-trench electrode detector has been proposed at BNL in 2009 [4], as it shown in Fig.1 [3,5,6]. Based on the traditonal 3D-Trench Electrode detector and in order to improve charge collection efficiency, an Open-Shell Electrode Detector, namely OSED, is proposed,field and hole (electron) concentration, detector electrical properties such as detector leakage current (I) and capacitance (C) as a function of bias voltage (V) (namely I-V curve and C-V curve), and detector full depletion voltage.…”

Section: Introductionmentioning

confidence: 99%

3D simulations of device performance for open-shell 3D-Trench electrode detector

Liu¹,

Tang²,

Liao³

et al. 2018

Proceedings of the 2nd International Forum on Management, Education and Information Technology Application (IFMEITA 2017)

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Abstract. Therefore silicon semiconductor detectors commonly used as radiation detector. In order to improve charge collection efficiency, an Open-Shell Electrode Detector, namely OSED (Chinese Patent #ZL201710732524.3) which is based on the Closed Shell-Electrode Detector (CSED), is proposed. The electrical characteristic curves of the cylindrical open shell 3D trench electrode detector, electric potential and electric field distribution, C-V curves under different open arc length are discussed and determined in this paper, with is benefit for the design of the detector.

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“…To reduce the portion of low-electric field region and improve the charge collection efficiency of the detector, a new structure based on Closed Shell-Electrode Detector (CSED) [4] --interleaved shell-electrode detector (ISED) is proposed in this paper. The portion of the dead region is just half of that of CSED according to geometric calculations.…”

Section: Introductionmentioning

confidence: 99%

3D Simulations of Electrical Characteristics of Interleaved Shell-Electrode Detector

Zhang¹,

Liao²,

Zheng³

2018

Proceedings of the 2nd International Forum on Management, Education and Information Technology Application (IFMEITA 2017)

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Abstract. An Interleaved Shell-Electrode Detector -ISED (Chinese patent #zl201721077852.6), based on the Closed Shell-Electrode Detector (CSED), is proposed for the improvement of charge collection efficiency by reducing the dead region. The novel design concept of ISED will be discussed in detail. Full 3D simulations of detector electric properties including profiles of electric potential and electric field have been carried out using a SILVACO TCAD tool. The dead region introduced by interleaved shell electrodes in an ISED single cell (the unit cell) that can form an effective array is half of that in a CSED. The disturbance of the electric properties by introducing interleaved shell electrodes in an ISED is minimum and kept in two localized corners in a square shaped single cell. Other detector properties such as detector full depletion voltage, capacity, breakdown voltage, and I-V and C-V characteristics have also been simulated, and results will be given.

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Full 3D Simulation of the New Closed Shell-Electrode Detector

Cited by 5 publications

References 13 publications

Design and Simulated Electrical Properties of a Proposed Implanted-Epi Silicon 3D-Spherical Electrode Detector

Design and Simulated Electrical Properties of a Proposed Implanted-Epi Silicon 3D-Spherical Electrode Detector

3D simulations of device performance for open-shell 3D-Trench electrode detector

3D Simulations of Electrical Characteristics of Interleaved Shell-Electrode Detector

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