Full-Bridge DC-DC Power Converter for Telecom applications with Advanced Trench Gate MOSFETs

Bojoi, Radu; Fusillo, Filadelfo; Raciti, A.; Musumeci, Salvatore; Scrimizzi, Filippo; Rizzo, Santi Agatino

doi:10.1109/intlec.2018.8612309

Cited by 19 publications

(4 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The maximum DC-AC conversion efficiency occurs at the optimum coupling capacitance CM opt . This is due to the achievement of the ZVD/ZDS condition, which drastically reduces the MOSFET switching losses, while the conduction losses are mainly related to the switch current root mean square (RMS) is,rms (Figure 9) and the RDS,ON of the chosen device [38,39]. Figure 15 also shows that the transferred power increases if the plate coupling increases.…”

Section: Resultsmentioning

confidence: 97%

Zero Voltage Switching Condition in Class-E Inverter for Capacitive Wireless Power Transfer Applications

Corti

Reatti

et al. 2021

Energies

Self Cite

View full text Add to dashboard Cite

This paper presents a complete design methodology of a Class-E inverter for capacitive wireless power transfer (CWPT) applications, focusing on the capacitance coupling influence. The CWPT has been investigated in this paper, because most of the literature refers to inductive power transfer (IWPT). However, CWPT in perspective can result in lower cost and higher reliability than IWPT, because it does not need coils and related shields. The Class-E inverter has been selected, because it is a single switch inverter with a grounded MOSFET source terminal, and this leads to low costs and a simple control strategy. The presented design procedure ensures both zero voltage switching (ZVS) and zero derivative switching (ZDS) conditions at an optimum coupling coefficient, thus enabling a high transmission and conversion efficiency. The novelties of the proposed method are that the output power is boosted higher than in previous papers available in the literature, the inverter is operated at a high conversion efficiency, and the equivalent impedance of the capacitive wireless power transfer circuit to operate in resonance is exploited. The power and the efficiency have been increased by operating the inverter at 100 kHz so that turn-off losses, as well as losses in inductor and capacitors, are reduced. The closed-form expressions for all the Class-E inverter voltage and currents waveforms are derived, and this allows for the understanding of the effects of the coupling coefficient variations on ZVS and ZDS conditions. The analytical estimations are validated through several LTSpice simulations and experimental results. The converter circuit, used for the proposed analysis, has been designed and simulated, and a laboratory prototype has been experimentally tested. The experimental prototype can transfer 83.5 W at optimal capacitive coupling with operating at 100 kHz featuring 92.5% of the efficiency, confirming that theoretical and simulation results are in good agreement with the experimental tests.

show abstract

Section: Resultsmentioning

confidence: 97%

Zero Voltage Switching Condition in Class-E Inverter for Capacitive Wireless Power Transfer Applications

Corti

Reatti

et al. 2021

Energies

Self Cite

View full text Add to dashboard Cite

show abstract

“…DC-DC converter control circuits can be implemented using analog or digital control circuits, but analog control chip as compared with digital micro controller unit (MCU) has some demerits such as the temperature drift, fixed control parameters, and slow response speed; on the other hand the price of the MCU and the required analog digital interfacing sensors are expensive as compared with the analog control technique requirement. Optimization analysis and the design of different control techniques for the DC-DC converter have been previously presented in [17][18][19][20][21]. Design of 1 kW efficient phase shift telecom DC-DC converter based on the maximum duty cycle and optimal hold-up time is given in [22].…”

Section: Introductionmentioning

confidence: 99%

Inrush Current Control of High Power Density DC–DC Converter

Okilly

Kim²,

Baek

2020

Energies

View full text Add to dashboard Cite

This paper presents a complete mathematical design of the main components of 2 kW, 54 direct current (DC)–DC converter stage, which can be used as the second stage of the two stages of alternating current (AC)–DC telecom power supply. In this paper, a simple inrush current controlling circuit to eliminate the high inrush current, which is generated due to high input capacitor at the input side of the DC–DC converter, is proposed, designed, and briefly discussed. The proposed circuit is very easy to implement in the lab using a single metal–oxide–semiconductor field-effect transistor (MOSFET) switch and some small passive elements. PSIM simulation has been used to test the power supply performance using the value of the designed components. Furthermore, the experimental setup of the designed power supply with inrush current control is built in the lab to show the practical performance of the designed power supply and to test the reliability of the proposed inrush current mitigation circuit to eliminate the high inrush current at initial power application to the power supply circuit. DC–DC power supply with phase shift zero voltage switching (ZVS) technique is chosen and designed due to its availability to achieve ZVS over the full load range at the primary side of the power supply, which reduces switching losses and offers high conversion efficiency. High power density DC–DC converter stage with smooth current startup operation, full load efficiency over 95%, and better voltage regulation is achieved in this work.

show abstract

“…where f sw is the switching frequency and V DS is the drain to source voltage [19]. The capacitors' behavior versus Drain to Source voltage variation for an 80 V device with a typical R DS,on = 1.8 mΩ are depicted in Figure 2c.…”

mentioning

confidence: 99%

“…The total gate charge (Q Gtot ) necessary for switching on the GaN FET is related to a V GS of 5 V. In Figure 2c the Q GS and Q GD quantity relative to the contribution of G GS and C GD are also indicated. The gate charges Q G and R DS,on are the two parameters needed to optimize the GaN Figure of Merit (FOM) [19].…”

mentioning

confidence: 99%

Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review

et al. 2021

Self Cite

View full text Add to dashboard Cite

The efficiency and power density improvement of power switching converters play a crucial role in energy conversion. In the field of motor control, this requires an increase in the converter switching frequency together with a reduction in the switching legs’ dead time. This target turns out to be complex when using pure silicon switch technologies. Gallium Nitride (GaN) devices have appeared in the switching device arena in recent years and feature much more favorable static and dynamic characteristics compared to pure silicon devices. In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues. In this work, primarily an experimental evaluation of GaN FETs in a low voltage electrical drive is carried out. The experimental investigation is obtained through two different experimental boards to highlight the switching legs’ behavior in several operative conditions and different implementations. In this evaluative approach, the main GaN FETs’ technological aspects and issues are recalled and consequently linked to motion control requirements. The device’s fast switching transients combined with reduced direct resistance contribute to decreased power losses. Thus, in GaN FETs, a high switching frequency with a strong decrease in dead time is achievable. The reduced dead time impact on power loss management and improvement of output waveforms quality is analyzed and discussed in this paper. Furthermore, input filter capacitor design matters correlated with increasing switching frequency are pointed out. Finally, the voltage transients slope effect (dv/dt) is considered and correlated with low voltage motor drives requirements.

show abstract

Full-Bridge DC-DC Power Converter for Telecom applications with Advanced Trench Gate MOSFETs

Cited by 19 publications

References 6 publications

Zero Voltage Switching Condition in Class-E Inverter for Capacitive Wireless Power Transfer Applications

Zero Voltage Switching Condition in Class-E Inverter for Capacitive Wireless Power Transfer Applications

Inrush Current Control of High Power Density DC–DC Converter

Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review

Contact Info

Product

Resources

About