Full characterization and modeling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure

Beznasyuk, D. V.; Stepanov, Petr; Verheijen, Marcel A.; Claudon, Julien; Hocevar, Moïra

doi:10.1103/physrevmaterials.4.074607

Cited by 9 publications

(7 citation statements)

References 56 publications

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“…Some part of the mismatch strain is released elastically via a ∼2 • bending of planes close to the nanowire corners. The latter is possible owing to free side walls of SAG nanowires similar to free-standing nanowires [62]. On the other hand, the InAs/InGaAs interface, highlighted with dashed lines exhibits a high crystalline quality.…”

Section: B In X Ga 1−x As Buffer Growthmentioning

confidence: 99%

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Beznasyuk

Martí‐Sánchez

Kang

et al. 2022

Phys. Rev. Materials

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Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics, and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realised, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and nonuniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an In x Ga 1−x As buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high-quality InAs transport channels with the field-effect electron mobility over 10 000 cm 2 V −1 s −1 . This is twice as high as for nonoptimized samples and among the highest reported for InAs selective area grown nanostructures.

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Section: B In X Ga 1−x As Buffer Growthmentioning

confidence: 99%

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Beznasyuk

Martí‐Sánchez

Kang

et al. 2022

Phys. Rev. Materials

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“…The defects were neglected in the present study based on the following two considerations. First, the NW heterostructures with small lateral dimensions are proven to be usually free of defects [23]. Thus, defects can be reasonably assumed to be absent from the present InGaN NW model that has an extremely small diameter.…”

Section: Modelsmentioning

confidence: 99%

“…The piezoelectric property together with the semiconducting property is vital for the applications of III-nitride NWs in novel piezotronic nanodevices [10,11,18,19], which can be constructed by the wurtzite NWs made from pure binary III-nitrides or alloyed ternary III-nitrides [10,11,[18][19][20]. Specifically, the alloyed ternary III-nitride NWs can be synthesised with the single composition and the graded composition [4,[21][22][23][24]. When compared with their counterparts with the single composition, the composition-graded NWs are found to possess continuously tunable band gaps and lattices along the NW axis [4,21,23].…”

Section: Introductionmentioning

confidence: 99%

“…Specifically, the alloyed ternary III-nitride NWs can be synthesised with the single composition and the graded composition [4,[21][22][23][24]. When compared with their counterparts with the single composition, the composition-graded NWs are found to possess continuously tunable band gaps and lattices along the NW axis [4,21,23]. The unique tunable material properties existing in the composition-graded III-nitride NWs make them appealing in the design of optoelectronic devices with broader spectrum and higher efficiency [4,25,26].…”

Section: Introductionmentioning

confidence: 99%

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Flexoelectricity in composition-graded InGaN nanowires

Zhang¹

2021

J. Phys. D: Appl. Phys.

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Due to the electromechanical coupling effect, composition-graded InGaN nanowires (NWs) have promising potential application in piezotronics. However, as an inhomogeneous system at the nanoscale, the electromechanical response of InGaN NWs can be affected by some small-scale effects, e.g. the flexoelectric effect, which is almost unexplored. In this paper, the piezoelectric and elastic properties of composition-graded InGaN NWs are investigated by using molecular dynamics (MD) simulations, in which a power-law formula is introduced to describe the continuously varied composition in graded InGaN NWs. MD results show that the diameter, Young's modulus and piezoelectric coefficient of graded InGaN NWs are dependent on the position of NWs. Moreover, the distribution of these structural and material parameters can be efficiently modified by changing the power-law exponent. The position-dependent diameter and Young's modulus can be well described by Vegard's law. However, as for the piezoelectric coefficient, a big discrepancy is observed between the results extracted from MD simulations and Vegard's law. This discrepancy is attributed to the enhanced piezoelectricity in graded InGaN NWs induced by the flexoelectric effect. The flexoelectric effect is found to originate from the non-uniform strain in graded InGaN NWs majorly induced by the varied Young's modulus along the NW axis, which becomes more significant as the length of NWs decreases. This work tries to present a comprehensive understanding of the electromechanical coupling of InGaN NWs, which can provide guidance for the design of graded InGaN NWs-based piezotronic nanodevices.

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“…Кроме того, исследовались упругие характеристики отдельных границ (переходных областей), разделяющих части цилиндра с постоянной собственной деформацией [13][14][15]. Контроль химического состава и напряженного состояния таких переходных областей важен для ННК с аксиальными гетероструктурами [14,16].…”

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Упругое Взаимодействие Квантовых Дисков В Гибридных QD/NW-структурах

Романов¹,

Колесникова²,

Гуткин³

et al. 2022

Письма В Журнал Технической Физики

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The elastic interaction of quantum disks (QDs) in a nanowire (NW), i.e., in a hybrid QD/NW structure with sharp heterointerfaces, is considered for the first time. Within the framework of the defect micromechanics approach, the energy of QD pair interaction is established and it is demonstrated that for QDs with a lattice mismatch of the same sign, an attraction zone appears to each other, depending on the ratio of the axial size of the QD to the radius of the NW. The discovered effect should be taken into account when choosing the modes of formation of hybrid QD/NW structures and in models explaining their properties.

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Full characterization and modeling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure

Cited by 9 publications

References 56 publications

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Flexoelectricity in composition-graded InGaN nanowires

Упругое Взаимодействие Квантовых Дисков В Гибридных QD/NW-структурах

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