Full characterization at 904 nm of large area Si p-n junction photodetectors produced by LID technique

Ismail, Raid A.; Abdulrazaq, Omar A.; Hadi, Aseel A.; Hamadi, Oday A.

doi:10.1051/epjap:2007028

Cited by 4 publications

(5 citation statements)

References 11 publications

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“…[13][14][15][16][17][18][19][20][21][22][23][24][25] In this work, a new technique to extract nanopowders from thin films deposited on nonmetallic substrates by physical vapor deposition methods and techniques. [26][27][28][29][30][31][32][33][34][35][36][37][38]…”

Section: Introductionmentioning

confidence: 99%

Production of nanopowders from physical vapor deposited films on nonmetallic substrates by conjunctional freezing-assisted ultrasonic extraction method

Hammadi

2018

Proceedings of the Institution of Mechanical Engineers, Part N:

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A new technique to extract nanoscale powders from thin films deposited by a physical vapor deposition method on nonmetallic substrates is proposed. Powders were extracted from films of different materials, such as silicon, nickel, copper, iron, aluminum and cobalt, and compounds, such as aluminum nitride, aluminum oxide, copper oxide, iron oxide, nickel cobaltite, nickel ferrite, nickel oxide, silicon carbide, silicon nitride and silicon oxide. These thin films were deposited on glass substrates by magnetron sputtering, pulsed-laser deposition, spray pyrolysis or thermal evaporation, and the particle sizes of the extracted powders were comparable to those of film samples. This technique is fast, low cost, reliable, highly clean and appropriate for large-scale samples.

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Section: Introductionmentioning

confidence: 99%

Production of nanopowders from physical vapor deposited films on nonmetallic substrates by conjunctional freezing-assisted ultrasonic extraction method

Hammadi

2018

Proceedings of the Institution of Mechanical Engineers, Part N:

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“…The electron temperature is an equally important plasma parameter which can be spectroscopically determined in a variety of ways: from the ratio of integrated line intensities, from the ratio of line intensity to underlying continuum, and from the shape of the continuum spectrum [16,17]. The diagnostic techniques employed for the determination of electron density includes plasma spectroscopy, Langmiur probe, microwave and laser interferometry, and Thomson scattering [18,19].…”

Section: Introductionmentioning

confidence: 99%

Detection of laser-produced tin plasma emission lines in atmospheric environment by optical emission spectroscopy technique

Aadim

2017

Photonic Sens

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A spectroscopic study on laser-produced tin plasma utilizing the optical emission spectroscopy (OES) technique is presented. Plasma is produced from a solid tin target irradiated with pulsed laser in room environment. Electron temperature is determined at different laser peak powers from the ratio of line intensities, while electron density is deduced from Saha-Boltzmann equation. A limited number of suitable tin lines are detected, and the effect of the laser peak power on the intensity of emission lines is discussed. Electron temperatures are measured in the range of 0.36 eV-0.44 eV with electron densities of the order 1017 cm -3 as the laser peak power is varied from 11 MW to 22 MW.

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“…Homojunction is essentially a junction between the n-and p-type portions of the same material formed by different impurity doping. The junction is termed as abrupt or graded, depending upon whether the impurity concentration in the material changes abruptly or gradually at the junction region [1,2]. When two layers of semiconductor materials of opposite carrier types are intimately joined, an exchange of charge carriers takes place, and the Fermi level becomes continuous in both layers [3].…”

Section: Introductionmentioning

confidence: 99%

“…These devices can be used to detect the presence or absence of minute quantities of light with intensities in the range of 10 -9 mW/cm 2 -10 2 mW/cm 2 [6]. Silicon photodiodes are efficiently used in many applications, such as spectroscopy, photography, analytical instrumentation, optical position sensors, beam alignment, surface characterization, laser range finders, optical communications, and medical imaging instruments [7,8].…”

Section: Introductionmentioning

confidence: 99%

Characteristics of heat-annealed silicon homojunction infrared photodetector fabricated by plasma-assisted technique

Hammadi

2016

Photonic Sens

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In this work, the effect of thermal annealing on the characteristics of silicon homojunction photodetector was studied. This homojunction photodetector was fabricated by means of plasma-induced etching of p-type silicon substrate and plasma sputtering of n-type silicon target in vacuum. The electrical and spectral characteristics of this photodetector were determined and optimized before and after the annealing process. The maximum surface reflectance of 1.89% and 1.81%, the maximum responsivity of 0.495 A/W and 0.55 A/W, the ideality factor of 1.80 and 1.99, the maximum external quantum efficiency of 76% and 83.5%, and the built-in potential of 0.79 V and 0.72 V were obtained before and after annealing, respectively.

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Full characterization at 904 nm of large area Si p-n junction photodetectors produced by LID technique

Cited by 4 publications

References 11 publications

Production of nanopowders from physical vapor deposited films on nonmetallic substrates by conjunctional freezing-assisted ultrasonic extraction method

Production of nanopowders from physical vapor deposited films on nonmetallic substrates by conjunctional freezing-assisted ultrasonic extraction method

Detection of laser-produced tin plasma emission lines in atmospheric environment by optical emission spectroscopy technique

Characteristics of heat-annealed silicon homojunction infrared photodetector fabricated by plasma-assisted technique

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