2022
DOI: 10.1021/acsnano.2c03157
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Full Composition Tuning of W1–xNbxSe2 Alloy Nanosheets to Promote the Electrocatalytic Hydrogen Evolution Reaction

Abstract: Composition modulation of transition metal dichalcogenides is an effective way to engineer their crystal/electronic structures for expanded applications. Here, fully composition-tuned W1–x Nb x Se2 alloy nanosheets were produced via colloidal synthesis. These nanosheets ultimately exhibited a notable transition between WSe2 and NbSe2 hexagonal phases at x = 0.6. As x approaches 0.6, point doping is converted into cluster doping and eventually separated domains of WSe2 and NbSe2. Extensive density functional th… Show more

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Cited by 14 publications
(9 citation statements)
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“…The HER can be described using a cathodic reaction (2H + + 2 e – → H 2 ), and therefore the reaction performance is maximized when the Gibbs free energy for H adsorption (|Δ G H* |) is close to 0. Based on our previous study, Se sites (no vacancies) on the basal plane are not favorable for HER because Δ G H* = 1.89, 2.05, and −2.55 eV for MoSe 2 , WSe 2 , and VSe 2 , respectively. Significantly, Δ G H* is close to 0 for the Se and V sites of (MoWV)­Se 2 ( C6 ). Figure d shows that Δ G H* = −0.05 eV for the Se coordinated with 3 V. Additionally, Δ G H* = 0.15, 0.16, and 0.33 eV for the Se coordinated with (2V, W), (2V, Mo), and (Mo, W, V), respectively, as shown in Figure S23.…”
Section: Resultsmentioning
confidence: 94%
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“…The HER can be described using a cathodic reaction (2H + + 2 e – → H 2 ), and therefore the reaction performance is maximized when the Gibbs free energy for H adsorption (|Δ G H* |) is close to 0. Based on our previous study, Se sites (no vacancies) on the basal plane are not favorable for HER because Δ G H* = 1.89, 2.05, and −2.55 eV for MoSe 2 , WSe 2 , and VSe 2 , respectively. Significantly, Δ G H* is close to 0 for the Se and V sites of (MoWV)­Se 2 ( C6 ). Figure d shows that Δ G H* = −0.05 eV for the Se coordinated with 3 V. Additionally, Δ G H* = 0.15, 0.16, and 0.33 eV for the Se coordinated with (2V, W), (2V, Mo), and (Mo, W, V), respectively, as shown in Figure S23.…”
Section: Resultsmentioning
confidence: 94%
“…MoSe 2 , WSe 2 , and VSe 2 exhibit E f = 20.14, 27.08, and 0.093 meV/atom, respectively. 12, 13,16 It suggests that E f decreases with increasing x V , thereby explaining the higher concentration of Se vacancies at higher x V values.…”
Section: Resultsmentioning
confidence: 99%
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