Full CVD Reel‐To‐Reel Process to Obtain Perfectly Oriented Silicon Films on Metal Tapes with Oxide Buffer Layers**

Moyzykh, M.; Samoilenkov, S. V.; Amelichev, V. A.; Vasiliev, Alexander L.; Pozdnyakov, Mikhail; Mankevich, A. S.; Tschepikov, Vsevolod; Kaul, A.R.

doi:10.1002/cvde.201407107

Cited by 1 publication

(2 citation statements)

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“…80 With the high temperatures required for chemical vapor deposition, epitaxy on these metal foils typically requires oxide buffer layers to prevent silicide formation. 81 In this way, low-temperature ec-LPE may simplify the use of such substrates. More work is needed to assess this point.…”

Section: ■ Resultsmentioning

confidence: 99%

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Si Electrochemical Liquid Phase Epitaxy: Low-Temperature Growth of Hyperdoped Epitaxial Si Films

et al. 2022

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Epitaxial films of Si have been prepared at room temperature by electrochemical liquid phase epitaxy (ec-LPE). Crystalline Si films were grown on both Si(111) and Si(100) substrates, demonstrating clear evidence of low-temperature homoepitaxy. The ec-LPE method was demonstrated as a hybrid approach that combined elements of conventional electrodeposition and traditional liquid phase epitaxy. Voltammetric and amperometric data were collected that indicated conditions where Si ec-LPE is possible with SiCl 4 in propylene carbonate electrolyte and eutectic gallium indium (e-GaIn) thin-film electrodes. Scanning electron micrographs, scanning transmission electron micrographs, and electron and X-ray diffraction data demonstrated that epitaxy extended throughout films that were several microns in thickness. Raman spectra, high-resolution X-ray diffraction data, time-of-flight secondary ion mass spectrometry, and energy-dispersive elemental mapping indicated that the asprepared films were uniformly hyperdoped with Ga at >10 at %. These cumulative results demonstrate a distinct new way to realize crystalline Si films suitable for optoelectronic applications.

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Section: ■ Resultsmentioning

confidence: 99%

“…Heteroepitaxial growth of Si epifilms on metal foils (e.g., Ni-W) is known . With the high temperatures required for chemical vapor deposition, epitaxy on these metal foils typically requires oxide buffer layers to prevent silicide formation . In this way, low-temperature ec-LPE may simplify the use of such substrates.…”

Section: Discussionmentioning

confidence: 99%