Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin-orbit component. Here, we report on InAs-based devices both in one-dimensional and two-dimensional configurations. In the former, low-temperature measurements on a suspended nanowire are presented, inspecting the intrinsic spin-orbit contribution of the system. In the latter, Josephson Junctions between two Nb contacts comprising an InAs quantum well are investigated. Supercurrent flow is reported, with Nb critical temperature up to T c ∼ 8 K. Multiple Andreev reflection signals are observed in the dissipative regime. In both systems, we show that the presence of external gates represents a useful knob, allowing for wide tunability and control of device properties, such as spin-orbit coherence length or supercurrent amplitude.Among all semiconductor materials, InAs plays a prominent role due to its low effective mass, strong spinorbit coupling, and high Landé g-factor. 16-21 Moreover, hybrid superconductor/semiconductor devices require high quality contacts with low normal/superconductor (N/S) interface resistance, to guarantee a robust proximity effect, and eventually large electron mean free path (MFP). 20,22 It has been shown that InAs represents the ideal choice for building hybrid devices, owing to the lack of a Schottky barrier at the interface with the metal, combined with the small effective mass and large spin-orbit coupling of this semiconductor. 16-21 Epitaxial Al/InAs heterostructures were realized that show an exceptionally transparent superconductor-semiconductor