Full Field, ArF Immersion Projection Tool

Owa, Soichi; Fujiwara, Tomoharu; Ishii, Yuki; Shiraishi, Kenichi; Nagaoka, Shirou

doi:10.1109/asmc.2006.1638725

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“…Furthermore, it is possible that reduced wavelengths and higher NAs could lead to even higher resolutions. Theoretically, an exposure system incorporating an ArF laser with a wavelength of 193 nm and an NA of 0.92 (which is already an established component of semiconductor exposure systems 9) ) could achieve a half pitch of 18 nm.…”

Section: Substratementioning

confidence: 99%

405 nm Laser Thermal Lithography of 40 nm Pattern Using Super Resolution Organic Resist Material

Usami

Watanabe

Kanazawa

et al. 2009

Appl. Phys. Express

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We have developed a high resolution resist for laser thermal lithography and a fabrication method for this resist. We designed a resist material which has specific desired properties. We aimed to raise the gasification temperature and achieve a sharply peaked temperature profile so that holes are formed only in the center of the laser spot. We were able to perform lithography with a half pitch of 40 nm. Furthermore, using the result of this lithography as a dry etching mask, we were able to perform dry etching on a number of materials, including SiO 2 and sapphire.

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Section: Substratementioning

confidence: 99%