Full Range Work Function Tuning of MOSFETs using Interfacial Yttrium Layer in fully Germanided Ni Gate

Abstract

In this work, the tuning of the nickel fully germanided metal gate workfunction via a Y/Ge/Ni gate stack structure was demonstrated. By varying the yttrium interlayer thickness from 0 to 9.6nm, a full range of workfunction tuning from 5.11eV to 3.8eV can be achieved. We showed that the chemical potential of the material adjacent to the gate electrode/gate insulator plays an important role in the determination of the workfunction. The gate stack is thermally stable up to 500 oC annealing.

Heterodielectric oxide‐engineered single‐lateral pocket‐based gated source TFET

“…The design parameters R and C L were further tuned to produce similar delays to check the designing window to provide an optimum operation over a supply voltage between 1.0 V ≤ V DD ≤ 0.7 V (Figure 12E). Using a gate of work function 3.8 eV, which can be obtained using gate stack work function tuning technique of Reference 40, HD‐GSLP TFET inverter can be designed for V DD as low as 0.5 V providing a wide operability range between V DD = 1.0 V to V DD = 0.5 V. Alternately, Ge mole fraction can also be increased to reduce the vertical tunnel onset 49 …”