Full-switching FSF-type superconducting spin-triplet magnetic random access memory element

Lenk, D.; Morari, R.; Zdravkov, V. I.; Ullrich, Aladin; Khaydukov, Yu. N.; Obermeier, G.; Müller, Claus; Сидоренко, А. С.; Nidda, H.-A. Krug von; Horn, S.; Тагиров, Л. Р.; Tidecks, R.

doi:10.1103/physrevb.96.184521

Cited by 36 publications

(26 citation statements)

References 151 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Unlike conventional electronics, spintronics uses not only charge transfer, but also the electron spin in solids, which serves to solve the problem of transporting and recording information [1][2][3][4][5][6][7]. Based on the basic non-dissipative elements of spintronics, it is possible to create new devices of superconducting nanoelectronics, consuming a minimum of energy and having high speed [8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Molecular dynamics modeling of formation processes parameters influence on a superconducting spin valve structure and morphology

Vakhrushev¹,

Fedotov²,

Boian³

et al. 2020

Preprint

View full text Add to dashboard Cite

The work is devoted to the study of the processes of formation and analysis of the parameters of a functional nanostructure — a superconducting spin valve, which is a multilayer structure consisting of ferromagnetic cobalt nanolayers separated by niobium superconductor nanolayers. The aim of the work was to study the influence of the main parameters of the technological regimes of the formation of these nanosystems: temperature, concentration and spatial distribution of deposited atoms over the surface of the nanosystem on the atomic structure and morphology of the nanosystem. The studies were carried out by the molecular dynamics method using the many-particle potential of the modified immersed atom method. The temperature in the calculation process was controlled using the Nose-Hoover thermostat. The simulation of the formation of atomic nanolayers by the method of alternating directional deposition of layers of different compositions under high vacuum and stationary temperature conditions is performed. As a result of the studies, the structure and thickness of the formed nanolayers and the distribution of elements in the area of their interface were studied. It is shown that alternating layers of the formed layered nanosystem and their interfaces have a significantly different atomic structure depending on the main parameters of the technological regimes of the formation of layered nanosystems.

show abstract

Section: Introductionmentioning

confidence: 99%

Molecular dynamics modeling of formation processes parameters influence on a superconducting spin valve structure and morphology

Vakhrushev¹,

Fedotov²,

Boian³

et al. 2020

Preprint

View full text Add to dashboard Cite

show abstract

“…Если фокусом исследования является сдвиг T c , то при автоматизированном измерении сопротивления ее (T c ) практически автоматически можно определять из положения максимума производной dR(T, H)/dT . Если исследуются переключающие свойства гетероструктуры с ниобиевыми слоями [26][27][28], то влияние управляющей магнитной субструктуры на T c должно превышать ширину перехода T c (H) по критерию " 10−90", чтобы получить полное переключение между нормальным и СП состояниями.…”

Section: результаты и их обсуждениеunclassified

Синтез Тонких Пленок Ниобия На Кремнии И Исследование Их Сверхпроводящих Свойств В Области Размерного Кроссовера

Янилкин¹,

Гумаров²,

Рогов³

et al. 2021

Журнал Технической Физики

View full text Add to dashboard Cite

Niobium films of 4–100 nm thickness were synthesized on a silicon substrate under ultrahigh vacuum conditions. Measurements of electrical resistance showed a high temperature of the superconducting transition Tc, in the range of 4.7–9.1 K, and extremely small transition widths ΔTc in the range of 260–11 mK. The dependences of Tc and ΔTc on the magnetic field were studied, and superconducting coherence lengths and mean free paths of the conduction electrons were determined for different thicknesses of the synthesized films. A specific effect of the magnetic field on ΔTc was found, which reveals a transition from three-dimensional to two-dimensional superconductivity at thicknesses below 10 nm. The dependences of Tc and ΔTc on the films thickness and the magnitude of the magnetic field are discussed in the framework of existing concepts of superconductivity in thin films of superconducting metals.

show abstract

“…Unlike conventional electronics, spintronics uses not only charge transfer, but also the electron spin in solids, solving the problem of transport and recording of information [1][2][3][4][5][6][7]. Based on the basic nondissipative elements of spintronics, it is possible to create new superconducting nanoelectronics devices that consume minimum energy and have a high operation speed [8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…Practice shows that the creation of multilayer S/F nanostructures with the required properties is an extraordinarily complex process. Figure 1 and Figure 2 show actual spin-valve multilayer nanosystems formed from various materials [9]. As demonstrated in the figures, the structure of real nanosystems is far from ideal.…”

Section: Introductionmentioning

confidence: 99%

Molecular dynamics modeling of the influence forming process parameters on the structure and morphology of a superconducting spin valve

Vakhrushev¹,

Fedotov²,

Boian³

et al. 2020

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

This work is a study of the formation processes and the effect of related process parameters of multilayer nanosystems and devices for spintronics. The model system is a superconducting spin valve, which is a multilayer structure consisting of ferromagnetic cobalt nanolayers separated by niobium superconductor nanolayers. The aim was to study the influence of the main technological parameters including temperature, concentration and spatial distribution of deposited atoms over the nanosystem surface on the atomic structure and morphology of the nanosystem. The studies were carried out using the molecular dynamics method using the many-particle potential of the modified embedded-atom method. In the calculation process the temperature was controlled using the Nose–Hoover thermostat. The simulation of the atomic nanolayer formation was performed by alternating the directional deposition of different composition layers under high vacuum and stationary temperature conditions. The structure and thickness of the formed nanolayers and the distribution of elements at their interfaces were studied. The alternating layers of the formed nanosystem and their interfaces are shown to have significantly different atomic structures depending on the main parameters of the deposition process.

show abstract

Full-switching FSF-type superconducting spin-triplet magnetic random access memory element

Cited by 36 publications

References 151 publications

Molecular dynamics modeling of formation processes parameters influence on a superconducting spin valve structure and morphology

Molecular dynamics modeling of formation processes parameters influence on a superconducting spin valve structure and morphology

Синтез Тонких Пленок Ниобия На Кремнии И Исследование Их Сверхпроводящих Свойств В Области Размерного Кроссовера

Molecular dynamics modeling of the influence forming process parameters on the structure and morphology of a superconducting spin valve

Contact Info

Product

Resources

About