Full wafer size IBC cell with polysilicon passivating contacts

Mewe, A.A.; Stodolny, M.K.; Anker, John N. van den; Lenes, Martijn; Pagès, Xavier Llimona i; Wu, Yu Cheng; Tool, Kees; Geerligs, Bart; Romijn, I.G.

doi:10.1063/1.5049277

Cited by 15 publications

(10 citation statements)

References 5 publications

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“…This is among the best values obtained so far with p + -poly-Si symmetrical samples on planar surface (in the range 732-735 mV for iVoc and 1-10 fA•cm -2 for J0) [14,20,21,23]. Values of 720 mV and 10 fA•cm -2 were also demonstrated on textured surface [22].…”

Section: Impact Of the Hydrogenation Stepsupporting

confidence: 69%

“…So far, hole-selective poly-Si/SiOx structures have been mainly formed with boron-doped poly-Si layer (poly-Si(B)) and have historically demonstrated lower passivation performances compared to their phosphorus counterparts [17]. Despite recent progress achieved with poly-Si(B)/SiOx passivating structures on both planar and textured surfaces [20][21][22], boron (B) is suspected to cause more defects in the structure, especially at the interface with the SiOx layer [23], due to low B diffusivity in SiOx leading to B atoms piling-up at the SiOx layer [24,25].…”

Section: Introductionmentioning

confidence: 99%

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Highly passivating and blister-free hole selective poly-silicon based contact for large area crystalline silicon solar cells

Morisset

Cabal

Grange

et al. 2019

Solar Energy Materials and Solar Cells

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• Blister-free boron-doped poly-Si layers are obtained by PECVD through optimization of the deposition temperature and gas ratio. • The process developed is approaching the industrial standards (large area KOH-polished wafers, SiOx growth included in standard RCA cleaning, semi-industrial PECVD tool). • High and homogeneous surface passivation properties are obtained (iVoc = 734 mV and J0 = 7 fA•cm-2). • Conductive spots detected by C-AFM are not mirroring pinholes within the interfacial SiOx layer.

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Section: Impact Of the Hydrogenation Stepsupporting

confidence: 69%

Section: Introductionmentioning

confidence: 99%

Highly passivating and blister-free hole selective poly-silicon based contact for large area crystalline silicon solar cells

Morisset

Cabal

Grange

et al. 2019

Solar Energy Materials and Solar Cells

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“…In the nonmetalized regions, no issues are expected, since the thermal budget of the previously performed junction formation process is much higher than that of the firing step, that is, the total amount of thermal energy transferred to the wafer during firing is substantially lower than that of the POLO formation process. However, previous works demonstrated that firing can indeed have a negative impact on the passivation of nonmetalized regions of n‐type and p‐type LPCVD and PECVD poly‐Si contacts 21,22,24,25 . The reason for this degradation is not yet clear and must be understood.…”

Section: Introductionmentioning

confidence: 97%

“…[17][18][19][20] The firing process performed after screen printing is a fast high-temperature process, typically done between 700 C and 900 C. Several groups reported on the degradation of the passivation quality in the metallized regions and also on nonmetalized regions for n-type poly-Si after such processes. 14,21,22 A significant amount of work has been done on the optimization of metal pastes and firing conditions to mitigate the former issue and to avoid the penetration of the metal through the poly-Si layer. 23 The effect of the firing on the nonmetalized regions is also receiving increasing research interest.…”

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confidence: 99%

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Firing stability of tube furnace‐annealed n‐type poly‐Si on oxide junctions

Hollemann

Rienäcker

Soeriyadi

et al. 2021

Progress in Photovoltaics

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Stability of the passivation quality of poly-Si on oxide junctions against the conventional mainstream high-temperature screen-print firing processes is highly desirable and also expected since the poly-Si on oxide preparation occurs at higher temperatures and for longer durations than firing. We measure recombination current densities (J 0 ) and interface state densities (D it ) of symmetrical samples with n-type poly-Si contacts before and after firing. Samples without a capping dielectric layer show a significant deterioration of the passivation quality during firing. The D it values are (3 ± 0.2) Â 10 11 and (8 ± 2) Â 10 11 eV/cm 2 when fired at 620 C and 900 C, respectively. The activation energy in an Arrhenius fit of D it versus the firing temperature is 0.30 ± 0.03 eV. This indicates that thermally induced desorption of hydrogen from Si H bonds at the poly-Si/SiO x interface is not the root cause of depassivation. Postfiring annealing at 425 C can improve the passivation again. Samples with SiN x capping layers show an increase in J 0 up to about 100 fA/cm 2 by firing, which can be attributed to blistering and is not reversed by annealing at 425 C. On the other hand, blistering does not occur in poly-Si samples capped with AlO x layers or AlO x /SiN y stacks, and J 0 values of 2-5 fA/cm 2 can be achieved after firing. Those findings suggest that a combination of two effects might be the root cause of the increase in J 0 and D it : thermal stress at the SiO z interface during firing and blistering. Blistering is presumed to occur when the hydrogen concentration in the capping layers exceeds a certain level.

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Advancing Monolithic Perovskite/TOPCon Tandem Solar Cells by Customizing Industrial‐Level Micro‐Nano Structures

Jiang,

Ding,

et al. 2024

Adv Funct Materials

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Texturing silicon solar cells with micro/nano‐structures is crucial for achieving outstanding optical performance in perovskite/silicon tandem solar cells (TSCs). However, ensuring excellent electrical properties remains a challenge due to reduced passivation quality of the bottom silicon sub‐cells and difficulties in perovskite formation on textured substrates. Here, an industrial‐level sub‐micron random pyramid (sMRP) structure on the front side of a tunnel oxide passivating contact (TOPCon) solar cell using a simple alkaline texturing process is presented, resulting in excellent optical and electrical properties. Through meticulous fabrication process tuning, uniform sMRP textures with a size of 0.6–0.8 µm are achieved, exhibiting low reflectance comparable to industrial‐level micron random pyramid (MRP) structures. Optimizing annealing temperatures of double‐sided TOPCon structures textured with front‐sided sMRP and rear‐sided MRP, yields high passivation quality, with a remarkable implied open‐circuit voltage (iVOC) of 713 mV. Furthermore, the sMRP‐textured surface facilitates the formation of a high‐quality perovskite film with larger grain sizes and fewer internal pinholes compared to the polished counterpart. Consequently, a proof‐of‐concept p‐i‐n typed perovskite/TOPCon TSC featuring sMRP textures obtains an outstanding efficiency of 28.67%, providing a promising approach for the commercial production of high‐efficiency perovskite/TOPCon TSCs.

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Full wafer size IBC cell with polysilicon passivating contacts

Cited by 15 publications

References 5 publications

Highly passivating and blister-free hole selective poly-silicon based contact for large area crystalline silicon solar cells

Highly passivating and blister-free hole selective poly-silicon based contact for large area crystalline silicon solar cells

Firing stability of tube furnace‐annealed n‐type poly‐Si on oxide junctions

Advancing Monolithic Perovskite/TOPCon Tandem Solar Cells by Customizing Industrial‐Level Micro‐Nano Structures

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