Fullerene Nanocomposite Resists for Nanolithography

Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices

“…One of the practical approaches to loss reduction is to use the so-called fullerene-assisted resist system [5]. The incorporation of fullerene in a resist system can improve the material strength during plasma etching [e.g., reactive ion etching (RIE)] as well as wet chemical etching (e.g., developer solution) [5].…”

“…The incorporation of fullerene in a resist system can improve the material strength during plasma etching [e.g., reactive ion etching (RIE)] as well as wet chemical etching (e.g., developer solution) [5]. As a result, a reduced sidewall roughness of the resist pattern can be obtained.…”

“…The preparation procedure of the C 60 ∕ZEP mixed resist is similar to what has been described in [5]. However, the preparation method in [5] uses orthodichlorobenzene (o-DCB) as the solvent for dissolving C 60 , since o-DCB was once the solvent for ZEP520A resist.…”

“…However, the preparation method in [5] uses orthodichlorobenzene (o-DCB) as the solvent for dissolving C 60 , since o-DCB was once the solvent for ZEP520A resist. Nowadays o-DCB is not preferred in many cleanrooms because of its high toxicity.…”