Fully controllable silicon nanowire fabricated using optical lithography and orientation dependent oxidation

Ramadan, Sami; Bowen, Leon; Popescu, Sinziana Mirela; Fu, Chen; Kwa, Kelvin S. K.; O’Neill, Anthony

doi:10.1016/j.apsusc.2020.146516

Cited by 7 publications

(1 citation statement)

References 57 publications

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“…In recent years, a succession of methods have been developed to fabricate various SiNWs. Generally, the fabrication methods of SiNWs can be divided into three types: CVD (based on the vapor-liquid-solid (VLS) mechanism) [ 15 , 16 ], EBL (following dry etching) [ 17 ], and wet etching followed by thermal oxidation (WETO) [ 18 , 19 , 20 ]. In contrast to the VLS and EBL methods, SiNWs-FET sensors fabricated by WETO method have remarkable advantages such as the controllability of the whole process and the capability of wholesale manufacture [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

A Theoretical and Simulation Analysis of the Sensitivity of SiNWs-FET Sensors

Yang

Liu³

et al. 2021

Biosensors

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Theoretical study and software simulation on the sensitivity of silicon nanowires (SiNWs) field effect transistor (FET) sensors in terms of surface-to-volume ratio, depletion ratio, surface state and lattice quality are carried out. Generally, SiNWs-FET sensors with triangular cross-sections are more sensitive than sensors with circular or square cross-sections. Two main reasons are discussed in this article. Firstly, SiNWs-FET sensors with triangular cross-sections have the largest surface-to-volume ratio and depletion ratio which significantly enhance the sensors’ sensitivity. Secondly, the manufacturing processes of the electron beam lithography (EBL) and chemical vapor deposition (CVD) methods seriously affect the surface state and lattice quality, which eventually influence SiNWs-FET sensors’ sensitivity. In contrast, wet etching and thermal oxidation (WETO) create fewer surface defects and higher quality lattices. Furthermore, the software simulation confirms that SiNWs-FET sensors with triangular cross-sections have better sensitivity than the other two types of SiNWs-FET sensors under the same conditions, consistent with the theoretical analysis. The article fully proved that SiNWs-FET sensors fabricated by the WETO method produced the best sensitivity and it will be widely used in the future.

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