Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts With Dopant Segregation

Abstract

Schottky-barrier source/drain (SB-S/D) presents a promising solution to reducing parasitic resistance for device architectures such as fully depleted UTB, trigate, or FinFET. In this letter, a low-temperature process (≤ 700 • C) with PtSi-based S/D is examined for the fabrication of n-type UTB and trigate FETs on SOI substrate (t Si = 30 nm). Dopant segregation with As was used to achieve the n-type behavior at implantation doses of 1 · 10 15 and 5 · 10 15 cm −2 . Similar results were found for UTB devices with both doses, but trigate devices with the larger dose exhibited higher on currents and smaller process variation than their lower dose counterparts. Index Terms-Dopant segregation (DS), FinFET, platinum silicide PtSi, Schottky-barrier (SB)-MOSFET, trigate.

Low-frequency noise in FinFETs with PtSi Schottky-barrier source/drain contacts

“…A Monte Carlo simulation analysis of gate and drain current noise under saturation conditions showed the influence of the barrier height in particular on the drain current noise [4]. For the devices investigated here a small barrier of about 0.15 eV, to the conduction and valence band respectively, was achieved, resulting in excellent IVcharacteristics for both n-channel and p-channel devices [5].…”

DC Performance Variations of SOI FinFETs with Different Silicide Thickness

“…SOI-based devices having fin-shaped [2], ultra-thin-body [3], or gate-all-around [4] channel regions attain great scalability without short channel degradation. Meanwhile, dopant-segregated SOI MOSFETs have been considered as one of the promising candidates due to their several advantages over the planar bulk MOSFETs: low Schottky barrier height (SBH) at the silicide/semiconductor interface, possibility of low-temperature process, and nearabrupt junction formation [5][6][7][8][9]. Not only MOSFETs but also tunneling FETs also utilize abrupt doping profile to enhance the band-to-band tunneling transport at the source/channel junction [10,11].…”