2020
DOI: 10.1109/jmems.2020.3001246
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Fully Differential Actuation and Sensing in Piezoelectric Diaphragm Resonators for High Signal to Background Resonant Sensing

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Cited by 5 publications
(4 citation statements)
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“…All the devices were fabricated on an SOI wafer with a 25 µm device layer thickness. Experimental results from some devices shown in figures 6(a), (c), (d) and 12(b) can be found in other reports [29][30][31][32].…”
Section: Vibration Characterisationsupporting
confidence: 54%
“…All the devices were fabricated on an SOI wafer with a 25 µm device layer thickness. Experimental results from some devices shown in figures 6(a), (c), (d) and 12(b) can be found in other reports [29][30][31][32].…”
Section: Vibration Characterisationsupporting
confidence: 54%
“…Conversely, these crystalline materials also undergo shape changes when an electric field is applied. This distinctive characteristic renders piezoelectric materials highly suitable for resonator manufacturing [ 32 , 33 , 43 ].…”
Section: Basic Principles Of Fmprsmentioning
confidence: 99%
“…However, since ZnO’s piezoelectric coefficient is significantly lower than that of PZT, another piezoelectric material, substituting ZnO with PZT, presents a simple and logical method to enhance the resonant micro-beam’s sensitivity. This strategy has been validated in research [ 33 , 58 ]. Rosario et al [ 55 ] constructed a piezoelectric-excited millimeter-sized cantilever (PEMC) sensor by combining a 127 µm thick piezoelectric layer (PZT) with a 160 µm thick silicon base layer, as illustrated in Figure 2 f. The study established that the fabricated PEMC sensor could measure gas density changes with an accuracy as low as 0.088 g/L, and a sensitivity equivalent to 0.049 g/(L·Hz).…”
Section: Basic Principles Of Fmprsmentioning
confidence: 99%
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